Magnesium as p Dopant in InGaAs / InP Heterojunction Bipolar Transistors Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Magnesium has been used as p dopant for the base in InGaAs/InP heterojunction bipolar transistors during growth by metalorganic vapor phase epitaxy. Very sharp and well controlled Mg profiles were achieved resulting in excellent dccharacteristics of the device. With a layer sequence suitable for high frequency applications, the transistors show a common emitter current gain of about 100 with very weak dependence on collector current, low offset voltage, low output conductance, and high breakdown voltage.