Zn diffusions from spin-on films were performed into InP/InGaAs/InP heterostructures suited for fabrication of heterojunction bipolar transistors. A strong segregation occurred at the InGaAs/InP heterojunctions enriching the Zn concentration in InGaAs by about an order of magnitude. From the Zn concentration profiles the relevant diffusion and segregation parameters were determined. Using these data an accurate numerical modeling and improved process control of the Zn diffusion into InGaAs/InP multilayer heterostructures can be achieved.
Zn diffusions from spin-on films have been carried out into n-InP/p+-InGaAs/n-InP heterostructures, which were grown by metalorganic vapor phase epitaxy for heterojunction bipolar transistors with Mg as a p dopant. After diffusion, Mg was completely substituted by Zn and enriched in the spin-on film. In the presence of Mg, the indiffusion of Zn is strongly enhanced. By varying doping levels and diffusion conditions, the underlying mechanism is studied and compared to recent experiments with Be-doped AlGaAs/GaAs heterostructures.
Magnesium has been used as p dopant for the base in InGaAs/InP heterojunction bipolar transistors during growth by metalorganic vapor phase epitaxy. Very sharp and well controlled Mg profiles were achieved resulting in excellent dccharacteristics of the device. With a layer sequence suitable for high frequency applications, the transistors show a common emitter current gain of about 100 with very weak dependence on collector current, low offset voltage, low output conductance, and high breakdown voltage.
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