Magnetic and magnetoresistive properties of nanocomposites based on Co and SiO

Pazukha, I. M.; Shkurdoda, Yu. O.; Chornous, A. M.; Dekhtyaruk, L. V.

doi:10.1142/s0217979219501133

Cited by 11 publications

(5 citation statements)

References 12 publications

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“…Resistivity is one of the base parameters which affect the electronic, strain, magnetic, etc. properties of thin-film systems [18][19][20][21]. So, the resistivity (conductivity) of thinfilm materials with a polycrystalline structure is widely analyses theoretically and experimentally [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Lohvynov

Cheshko

Pazukha

et al. 2022

Phys. Chem. Solid St.

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In this paper, the investigation of the crystal structure and electrophysical properties of Co/Ru/Co/Sub three-layer film systems with a Ru layer thickness dRu = 5-20 nm has been carried out. It is shown that for both as-deposited and annealed at 800 K thin-film samples the phase composition corresponds to hcp-Co + hcp-Ru. The dependence of resistivity and temperature coefficient of resistance as a function of dRu was received. It was demonstrated that the change in the resistivity value during the first cycle of heat treatment stays more significant than more Ru layer thickness. The value of temperature coefficient of resistance has an order of 10-4 and growth from 5.05×10-4 to 6.42×10-4 K-1 within the dRu range 0-20 nm.

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Section: Introductionmentioning

confidence: 99%

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Lohvynov

Cheshko

Pazukha

et al. 2022

Phys. Chem. Solid St.

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“…Among different modern preparation methods of thin-film structures, the alternate and co-deposition of ferromagnetic and nonmagnetic materials can be distinguished. At this, various methods like thermal evaporation, electron beam or magnetron deposition, laser lithography can be used [1][2][3][4]. Regardless of the chosen method, the physical properties of nanostructures will depend on technological conditions: a base pressure in a vacuum chamber, the composition of the residual atmosphere, type and temperature of a substrate, deposition rate, and so on.…”

Section: Introductionmentioning

confidence: 99%

“…At the formation of nanostructures by the codeposition method, usually used the combination of magnetic and nonmagnetic components with low mutual solubility. It is alloyed realize structures that consist of magnetic nanoparticles randomly distributed in metal [10,11] or insulator matrix [12,13].…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistive Properties of Multilayer Film Systems Based on Permalloy and Silver

Pazukha

Shuliarenko

Dolgov-Gordiichuk

et al. 2021

Phys. Chem. Solid St.

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In this paper, the experimental investigation focuses on the magnetoresistive properties of nanosized film systems. Their structure changes from layered to granular due to transition from bilayer FM/NM (FM is a ferromagnetic material, NM is a nonmagnetic material) to [FM/NM]n multilayer film at a constant total thickness of samples. As ferromagnetic and nonmagnetic materials were chosen permalloy Ni80Fe20 (Py) and Ag, respectively. It was demonstrated that the shape of the field dependences of magnetoresistance depends on the number of bilayer Py/Ag. For as-deposited [Py/Ag]n/S at n = 8, 16, the transition from the antiferromagnetic ordering of magnetic moments to ferromagnetic one occurs under an external magnetic field. As a result, the resistivity of the samples reduced, and the giant magnetoresistive effect was realized. The increase of the number of bilayers repeats from 2 to 16 at the unchanged total thickness of the system leads to the growth of the magnetoresistance from 0.1 % to 0.35 %. During annealing up to 600 K, the magnetoresistive effect is reduced, but it does not disappear completely

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“…The complex investigation of the crystal structure, phase state, electrophysical, strain, and magnetoresistive properties of nanosized thin-film materials is still one of the urgent problems of the material science [1][2][3][4]. The application of various types of such materials (granular nanostructures, cermets, vacuum tunnel junctions, etc.)…”

Section: Introductionmentioning

confidence: 99%

Peculiarity of Magnetoresistance of Composite Materials Based on Co and SiO

Pazukha¹,

Shchotkin²,

Pylypenko³

et al. 2021

J. Nano- Electron. Phys.

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A series of thin-film composite materials based on Co and SiO were deposited via electron-beam coevaporation technique using two independent sources. The concentration of Co atoms of thin-film composite materials varied from 35 to 90 at. %. It was controlled by using a scanning electron microscope (Tescan VE-GA3) with an energy-scattering X-ray (EDX) detector (Oxford Instruments). The total thickness of the nanocomposites was controlled by a system of two independent quartz resonators and amounted to 30 and 60 nm. The magnetoresistive properties of these structures deposited at room temperature were investigated. The results showed that the percolation threshold for the system based on Co and SiO is in the concentration range of сСо  60-70 at. %. From the field dependences of the magnetoresistance (MR) obtained at room temperature, it follows that the electrical resistance of the films decreases when they are introduced into the magnetic field (negative magnetoresistance). The negative MR indicates that the dominant effect observed is due to spin-dependent electron tunneling between ferromagnetic nanogranules. At the concentration range of сСо  40-60 at. %, isotropic MR of 1.5-2.5 % is realized. The maximum on the concentration dependences of MR shifts to the region of lower concentrations of Co with increasing sample thickness.

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Magnetic and magnetoresistive properties of nanocomposites based on Co and SiO

Cited by 11 publications

References 12 publications

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Effect of Ru Interlayer thickness on Electrophysical Properties of Co/Ru/Co three-layer film systems

Magnetoresistive Properties of Multilayer Film Systems Based on Permalloy and Silver

Peculiarity of Magnetoresistance of Composite Materials Based on Co and SiO

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