2014
DOI: 10.1038/ncomms5582
|View full text |Cite
|
Sign up to set email alerts
|

Magnetic behaviour of TbPc2 single-molecule magnets chemically grafted on silicon surface

Abstract: Single-molecule magnets (SMMs) are among the most promising molecular systems for the development of novel molecular electronics based on the spin transport. Going beyond the investigations focused on physisorbed SMMs, in this work the robust grafting of Terbium(III) bis(phthalocyaninato) complexes to silicon surface from a diluted solution is achieved by rational chemical design yielding the formation of a partially oriented monolayer on the conducting substrate. Here, by exploiting the surface sensitivity of… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

7
104
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 123 publications
(112 citation statements)
references
References 60 publications
7
104
1
Order By: Relevance
“…These interactions can be weaker or completely absent if (unwanted) adsorbates are present. Wet chemistry type approaches have been demonstrated to be very successful to anchor molecular magnetic clusters, SMMs and SIMs to a variety of surfaces [21,[138][139][140][141]. This has proven to be very useful to decouple and isolate SMMs and SIMs from the surface, however, achieving direct moleculesurface electronic and magnetic coupling on purpose is rather challenging with this approach, with some few exceptions of rather inert surfaces such as Au(1 1 1) or highly oriented pyrolitic graphite (HOPG).…”
Section: Molecules Surfaces and Interactionsmentioning
confidence: 99%
See 1 more Smart Citation
“…These interactions can be weaker or completely absent if (unwanted) adsorbates are present. Wet chemistry type approaches have been demonstrated to be very successful to anchor molecular magnetic clusters, SMMs and SIMs to a variety of surfaces [21,[138][139][140][141]. This has proven to be very useful to decouple and isolate SMMs and SIMs from the surface, however, achieving direct moleculesurface electronic and magnetic coupling on purpose is rather challenging with this approach, with some few exceptions of rather inert surfaces such as Au(1 1 1) or highly oriented pyrolitic graphite (HOPG).…”
Section: Molecules Surfaces and Interactionsmentioning
confidence: 99%
“…A recent study addresses this topic using a hydrogen-terminated Si(1 0 0) surface [141]. The TbPc 2 molecules were functionalized with long alkyl chains and chemically grafted onto the surface via the thermal hydrosilylation process.…”
Section: Hopg and Graphenementioning
confidence: 99%
“…Lanthanide-based SIMs have been intensively investigated for more than 10 years and have achieved significant progress in information storage and spintronic aspects, such as, (i) high magnetic hysteresis temperature (30 K) [62]; (ii) high magnetic anisotropic energy barrier (1000 K) [63]; and (iii) surface deposition of molecular magnets without changing the original magnetism [64][65][66][67]. In contrast, the attempts of using lanthanide-based SIMs as spin qubits have just begun [8,9,68,69].…”
Section: Single-ion Magnetic Molecules With Single 4f Spinsmentioning
confidence: 99%
“…From the »¤¤ peak of the cationic form 1 for an ac field of 10 3 Hz, T B is estimated to be 52 K, which is 12 K higher than those of the anionic form 2 ( Figure 5b) 0 (3) to the silicon surface reduces the electron density of the Pc rings and increase in the magnetic anisotropy of the complex with a reduction in the height of the SAP coordination polyhedron. 20 Although the T B value for complex 3 on the ) 2 ] 0 (4) noncovalently attached to CNT shows hysteresis behavior only at lower temperatures (0.04 K). 21 A possible reason for the hysteresis behavior observed at relatively high temperatures for complex 3 on the silicon surface is longitudinal contraction of the polyhedron due to surface effects, which is larger for the case of 3 on the silicon surface than for 4 on CNT.…”
Section: Introductionmentioning
confidence: 99%