Magnetic compensation at two different composition ratios in rare-earth-free 
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 ferrimagnetic films

Mitarai, Haruka; Komori, Taro; Hirose, Taku; Ito, Keita; Ghosh, Sanjay; Honda, Syuta; Toko, Kaoru; Vila, Laurent; Attané, Jean Philippe; Amemiya, Kenta; Suemasu, Takashi

doi:10.1103/physrevmaterials.4.094401

Cited by 21 publications

(13 citation statements)

References 47 publications

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“…There was not much difference in the XAS spectra of all the samples. The obtained XAS spectra are quite similar to those at the Mn L 2,3 absorption edges in (Mn,Ni) 4 N [25] and (Mn,Co) 4 N [26] epitaxial layers. A distinct shoulder is observed in the XAS spectra at a 2 eV higher energy than the main peaks of L 3 edges in all the films, as denoted by the arrows.…”

Section: Resultssupporting

confidence: 66%

“…In figure 4, the sign of ρ AHE reverses between x = 0.15 and 0.27, and remains unchanged at x = 0.41. Such sign reversal in ρ AHE is generally recognized as the MC point in ferrimagnets [9,10], as well as in (Mn,Ni) 4 N and (Mn,Co) 4 N [25,26]. This result shows that the relative orientation of magnetic moment of Mn(II) atoms changes with respect to the magnetization between x = 0.15 and 0.27, which confirms the reversal of the magnetic moment of Mn(II) atoms, marked by peak β, between figures 3(b) and (c).…”

Section: Resultsmentioning

confidence: 97%

“…They also possess a spontaneous magnetization as small as ∼100 kA m −1 [17,19,23], and a relatively high spin polarization of electrical conductivity (P = 0.8) [24]. By doping a small amount of magnetic elements, such as Ni or Co, and substituting for part of the Mn(I) and/or Mn(II) atoms, the MC can be reached at room temperature (RT) [25][26][27], with a high thermal stability [28]. The resulting spin-transport properties are astonishing, as the classical spin-transfer torque in these systems leads to domain wall velocities comparable to what can be obtained using spinorbit torques.…”

Section: Introductionmentioning

confidence: 99%

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Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Yasuda¹,

Komori²,

Mitarai³

et al. 2021

J. Phys. D: Appl. Phys.

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The ferrimagnet Mn4N forms a family of compounds useful in spintronics. In a compound comprising non-magnetic and magnetic elements, one basically expects the compound to become ferromagnetic when the proportion of the magnetic element increases. Conversely, one does not expect ferromagnetism when the proportion of the non-magnetic element increases. Surprisingly, Mn4N becomes ferromagnetic at room temperature when the Mn content is decreased by the addition of In atoms, a non-magnetic element. X-ray magnetic circular dichroism measurement reveals that the magnetic moment of Mn atoms at face-centered sites, Mn(II), reverses between x = 0.15 and 0.27 and aligns parallel to that of Mn atoms at corner sites, Mn(I), at x = 0.27 and 0.41. The sign of the anomalous Hall resistivity also changes between x = 0.15 and 0.27 in accordance with the reversal of the magnetic moment of the Mn(II) atoms. These results are interpreted from first-principles calculation that the magnetic moment of Mn(II) sites which are the nearest neighbors to the In atom align to that of Mn(I) sites.

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Section: Resultssupporting

confidence: 66%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Yasuda¹,

Komori²,

Mitarai³

et al. 2021

J. Phys. D: Appl. Phys.

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“…The magnetic compensation in ferrimagnets is suitable for applying to magnetization switching due to the reduction of critical switching current density [99,100]. Mitarai et al studied the magnetic compensation in Co x Mn 4−x N films in 2020 [101]. The 30 nm thick Co x Mn 4−x N films with x varied from 0 to 1.3 were deposited on STO (001) substrates by MBE.…”

Section: Co and Ni Dopingmentioning

confidence: 99%

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Zhang

2021

J. Phys. D: Appl. Phys.

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Mn4N is a typical transition metal nitride with antiperovskite structure. Mn4N films and Mn4N based heterostructures have attracted much attention for potential applications due to their ferrimagnetism, high thermal stability, perpendicular magnetic anisotropy and low saturation magnetization. The fascinating physical properties promise a series of novel applications in next-generation electronic, memory and energy-efficient devices. In this review, the progress of Mn4N films and its heterostructures are systematically summarized and discussed. In the 1st part, the various Mn–N compounds with different phases are introduced, and the basic properties of manganese nitrides are emphasized in details, especially for the properties, superiorities and applications in spintronics of Mn4N. The 2nd part summarizes the fabrication methods, structure and physical properties of Mn4N films. Besides, the underlying mechanisms of Mn4N films and other similar materials are briefly reviewed. In the 3rd part, the tunable magnetic properties of Mn4N films are discussed, including the manipulations methods of different Mn4N heterostructures in recent years. The 4th part highlights the physical properties of Mn4N films doped with other metals, including Co, Ni, and other heavy metal elements. The 5th part illustrates the potential applications of Mn4N films based on the physical properties discussed before. Finally, challenges and future prospects for Mn4N films are discussed, which could provide guidance for developing novel applications and designing functional devices.

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“…). [33][34][35] The AHE loops in a wide temperature range (5-300 K) for the Mn 4 N (30 nm) films can be found in Figure S2 of Supporting Information. The metallic behavior of the Mn 4 N (30 nm) is also revealed by performing a temperature-dependent electrical resistivity measurement (R − T), as shown in Figure 2D.…”

Section: Mnimentioning

confidence: 99%

Spin‐Torque Switching in Rare‐Earth‐Free Compensated Ferrimagnet Mn₄N Films

Bai

Dong

et al. 2021

Adv Elect Materials

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In this paper, the growth of rare‐earth‐free compensated ferrimagnet (C‐FIM) Mn4N single crystalline films is reported, with perpendicular magnetic anisotropy (PMA) on the MgO(001) substrates by reactive magnetron sputtering. Subsequently, the current‐induced spin‐orbit torque (SOT) switching is experimentally demonstrated through passing currents in the Hall bar device made of Mn4N/Pt bilayer, with the thickness of Mn4N approaching 60 nm. Furthermore, the accompanied SOT efficiencies are characterized by employing the harmonic Hall voltage measurements. In particular, an enhanced effective SOT efficiency with the increased thickness of Mn4N films is observed, suggesting the existence of a bulk‐like spin torque in the present material system. The results demonstrate that the perpendicularly magnetized C‐FIM Mn4N films can provide a promising material platform for developing the rare‐earth‐free FIM spintronics devices.

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Magnetic compensation at two different composition ratios in rare-earth-free Mn4−xCoxN ferrimagnetic films

Cited by 21 publications

References 47 publications

Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Spin‐Torque Switching in Rare‐Earth‐Free Compensated Ferrimagnet Mn₄N Films

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Magnetic compensation at two different composition ratios in rare-earth-free Mn4−xCoxN ferrimagnetic films

Cited by 21 publications

References 47 publications

Ferrimagnetic–ferromagnetic phase transition in Mn4N films favored by non-magnetic In doping

Ferrimagnetic–ferromagnetic phase transition in Mn4N films favored by non-magnetic In doping

Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications

Spin‐Torque Switching in Rare‐Earth‐Free Compensated Ferrimagnet Mn4N Films

Contact Info

Product

Resources

About

Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Ferrimagnetic–ferromagnetic phase transition in Mn₄N films favored by non-magnetic In doping

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Spin‐Torque Switching in Rare‐Earth‐Free Compensated Ferrimagnet Mn₄N Films