Magnetic coupling in Co/Cr2O3/CrO2 “trilayer” films

Cheng, Ruihau; Caruso, Anthony N.; Lü, Yuan; Liou, Sy‐Hwang; Dowben, Peter A.

doi:10.1063/1.1558212

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…The change in sign of the coupling is produced by spin-dependent broadening of the vacancy level due to interaction with the electrodes. An effect of defects in the barrier on interlayer exchange coupling was also found in Co/Cr 2 O 3 /CrO 2 [321] and in Fe 2 O 3 /MgO/Fe junctions [322].…”

Section: Defects In the Barriermentioning

confidence: 59%

Interface effects in spin-polarized metal/insulator layered structures

Velev

Dowben

Tsymbal

et al. 2008

Surface Science Reports

113

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Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.

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Section: Defects In the Barriermentioning

confidence: 59%

Interface effects in spin-polarized metal/insulator layered structures

Velev

Dowben

Tsymbal

et al. 2008

Surface Science Reports

113

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“…Full understanding of the basic physics involved is essential for development of new devices with applications in spin electronics, in particular for magnetoresistive tunnel junctions (MTJs) involving a thin insulator sandwiched between two ferromagnetic films. There is an increasing body of evidence that impurities in the insulating layer will "dope" this layer and alter the net polarization of electrons injected into the insulating layer [1][2][3][4][5], with strong temperature effects [3,5]. Interlayer coupling between two ferromagnetic films, separated by a nonmetallic spacer layer [6][7][8][9][10][11], sometimes appears to be distinct from the low temperature tunneling phenomena between two ferromagnets, through a dielectric spacer layer [12][13][14][15][16], as the coupling is sometimes oscillatory [6][7][8][9][10]17].…”

Section: Introductionmentioning

confidence: 99%

Insights into the local electronic structure of semiconducting boron carbides in the vicinity of transition metal dopants

Luo

Lü

Liu

et al. 2010

Materials Science and Engineering: B

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“…The dielectric constant of SiO is around 4.5. The possible reactions between Co and SiO have been studied and formation of ferromagnetic-insulating interface greatly influences an exchange coupling [8]- [14]. In this investigation, we report an up to roughly 55 of dielectric constant of SiO by inserting an extra cobalt thin film and its dielectric variation can be modulated by the inserted Co layer.…”

Section: Introductionmentioning

confidence: 71%

Co Thickness Effect on the Dielectric Permittivity of SiO$_{2}$/Co/SiO$_{2}$ Films

Ding

Yao

et al. 2012

IEEE Trans. Magn.

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The effect of Co inserted layer with thickness below 20 nm on the dielectric permittivity of SiO (60 nm)/Co(x nm)/SiO (60 nm) thin films fabricated on glass B270 substrates by the reactive sputtering technique was studied. The dielectric constant is around 7.4 for B270 glass substrate and SiO /B270 film. However, it is rapidly raised up to roughly 55 for all the SiO /Co/SiO samples with the thickness of Co inserted layer larger than 2 nm. From the cross section TEM pictures of the SiO /Co/SiO films with 1 and 2 nm Co thickness, we have experimentally demonstrated that this enhancement behavior of the dielectric constant is due to the growth mechanism of the Cobalt inter-layer from island clusters to continuous Co layer for samples with x larger than 2 nm. The adding of a Co inter-layer redistributes the interface charges between Co and SiO layers, and that enhances both the intrinsic polarization and its dielectric constant. For the magnetic induced dielectric variation, the variation of the dielectric constant also increased with thickness of Co for samples with x larger than 2 nm. A direct observation of a 0.04-0.20% dielectric variation is induced by external magnetic field. However this increase behavior is roughly saturated for applied magnetic field roughly above 60 Oe. The magnetodielectric properties in SiO /Co/SiO films are manifested and it has potential for a ferroic sensor application.Index Terms-Cobalt (Co), dielectric constant, magnetodielectric, silicon dioxide (SiO ).

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Magnetic coupling in Co/Cr2O3/CrO2 “trilayer” films

Cited by 12 publications

References 32 publications

Interface effects in spin-polarized metal/insulator layered structures

Interface effects in spin-polarized metal/insulator layered structures

Insights into the local electronic structure of semiconducting boron carbides in the vicinity of transition metal dopants

Co Thickness Effect on the Dielectric Permittivity of SiO$_{2}$/Co/SiO$_{2}$ Films

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