Magnetic field argon ion filtering for pulsed magnetron sputtering growth of two-dimensional MoS2

Voevodin, Andrey A.; Waite, Adam R.; Bultman, John E.; Hu, Jianjun; Muratore, Christopher

doi:10.1016/j.surfcoat.2015.09.013

Cited by 18 publications

(13 citation statements)

References 45 publications

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“…More recently, sputtering has been refined to meet the needs of the semiconductor industry and can produce large area monolayer sheets of MoS 2 onto appropriate substrates such as thermally oxidized silicon wafers. 18 A general approach to incorporating various d-block metals into molybdenum disulfide is outlined by Stupp, and cosputtering with targets of the appropriate metal and molybdenum disulfide at 190 °C under argon flow is used to produce alloyed films. 19 The influence of dopant on frictional characteristics of the films formed indicates a beneficial effect of the lighter transition metals, with Co, Cr, and Ni yielding films with a stable frictional response and a reduced wear rate.…”

Section: Transition Metal Dopingmentioning

confidence: 99%

“…Sputtering has also been extensively researched as a route to MoS 2 and WS 2 films, , as has pulsed laser evaporation, , and both methods use targets of the material to be deposited as a thin film and as such are easily adaptable for incorporation of dopants by adding extra targets and codepositing. More recently, sputtering has been refined to meet the needs of the semiconductor industry and can produce large area monolayer sheets of MoS 2 onto appropriate substrates such as thermally oxidized silicon wafers …”

Section: Transition Metal Dopingmentioning

confidence: 99%

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Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

2016

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Research into layered transition metal dichalcogenides (TMDCs), most notably those of molybdenum and tungsten disulfides, has become extensive, involving fields as diverse as optoelectronics, spintronics, energy storage, lubrication, and catalysis. The modification of TMDCs by transition metal doping can improve their performance in such applications and hence extend their potential for technological applications. This review concerns the synthetic strategies that have been used to incorporate transition metals into TMDCs and the applications of the resultant materials and relevant computational studies on the predicted properties of the doped materials.

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Section: Transition Metal Dopingmentioning

confidence: 99%

Section: Transition Metal Dopingmentioning

confidence: 99%

Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

2016

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“…[40][41][42][43][44] However, with a relatively large band gap (≈2.7 eV) and the existence of contact resistance between the nanosheets, g-C 3 N 4 exhibits a poor electrical conductivity and low photocatalytic activity owing to the rapid recombination of photogenerated electron-hole pairs. [61][62][63] For the applications of MoS 2 in photocatalytic H 2 production, since only its edges have a high catalytic activity, whereas its basal plane is inactive, a low photocatalytic activity has been achieved, even for single-layer MoS 2 . To this end, the hybridization of g-C 3 N 4 with other functional materials, including fullerenes, has been developed in recent years and appears feasible since the polymeric nature of g-C 3 N 4 renders the chemical structure flexible.…”

Section: Introductionmentioning

confidence: 99%

“…The inorganic transition‐metal dichalcogenides (TMDs) represent another type of emerging 2D semiconducting nanomaterial and have been attracting widespread attention due to their intriguing electronic, optical, and mechanical properties . MoS 2 , consisting of hexagonal rings with Mo and S atoms alternately located at the hexagon corners, is the most representative TMD with a direct band gap in monolayer form and high in‐plane carrier mobility, thus being suitable for versatile applications in electro and photocatalysis, photovoltaics, and photoelectric devices . For the applications of MoS 2 in photocatalytic H 2 production, since only its edges have a high catalytic activity, whereas its basal plane is inactive, a low photocatalytic activity has been achieved, even for single‐layer MoS 2 .…”

Section: Introductionmentioning

confidence: 99%

Hybrids of Fullerenes and 2D Nanomaterials

2018

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Fullerene has a definite 0D closed‐cage molecular structure composed of merely sp2‐hybridized carbon atoms, enabling it to serve as an important building block that is useful for constructing supramolecular assemblies and micro/nanofunctional materials. Conversely, graphene has a 2D layered structure, possessing an exceptionally large specific surface area and high carrier mobility. Likewise, other emerging graphene‐analogous 2D nanomaterials, such as graphitic carbon nitride (g‐C3N4), transition‐metal dichalcogenides (TMDs), hexagonal boron nitride (h‐BN), and black phosphorus (BP), show unique electronic, physical, and chemical properties, which, however, exist only in the form of a monolayer and are typically anisotropic, limiting their applications. Upon hybridization with fullerenes, noncovalently or covalently, the physical/chemical properties of 2D nanomaterials can be tailored and, in most cases, improved, significantly extending their functionalities and applications. Here, an exhaustive review of all types of hybrids of fullerenes and 2D nanomaterials, such as graphene, g‐C3N4, TMDs, h‐BN, and BP, including their preparations, structures, properties, and applications, is presented. Finally, the prospects of fullerene‐2D nanomaterial hybrids, especially the opportunity of creating unknown functional materials by means of hybridization, are envisioned.

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“…This type of sputtering is called magnetron sputtering, and it can be used to sputter any film, regardless of its melting temperature. Magnetron sputtering has been used to deposit both MoS 2 [ 181 , 182 ] and WS 2 films [ 183 ]. The major concern with sputtered 2D films is that the material which is deposited is polycrystalline and often sub-stoichiometric [ 181 ].…”

Section: Fabrication and Working Principle Of 2d-material-based Gas S...mentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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Magnetic field argon ion filtering for pulsed magnetron sputtering growth of two-dimensional MoS2

Cited by 18 publications

References 45 publications

Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

Hybrids of Fullerenes and 2D Nanomaterials

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

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