Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

Tedstone, Aleksander A.; Lewis, David J.; O’Brien, Paul

doi:10.1021/acs.chemmater.6b00430

Cited by 485 publications

(343 citation statements)

References 71 publications

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“…[56] Despite testing a range of deposition conditions, for example, temperatures from 150 to 500 °C, we either obtained no films at all or the films were highly nonuniform in thickness across the substrates. Increasing the MoCl 5 dose decreased the film thickness close to the precursor inlet, which hints toward etching of the deposited film by MoCl 5 . Later, we also found that Mo(CO) 6 , the other molybdenum precursor used for ALD of MoS 2 , [47][48][49][50][51][52] suffered from heavy precursor decomposition in our reactor already at 110 °C.…”

Section: Evaluation Of Published Mos 2 Processesmentioning

confidence: 90%

“…In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications.…”

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confidence: 99%

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Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

111

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Compared to the most well-known 2D material, graphene, which is a semi-metal, the semiconducting 2H phase of MoS 2 is advantageous in having a band gap suitable for electronic applications. In bulk form, MoS 2 has an indirect band gap of 1.3 eV, which increases as a function of decreasing film thickness. In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics. [23,24] MoS 2 has also shown promise in, for example, catalysis, [25] batteries, [26] photovoltaics, [27] sensors, [28] and medicine. [29] The production of high-quality, large-area MoS 2 films with a thickness controllable down to a monolayer, as required in many of the aforementioned applications, still remains a major challenge. Additionally, in many cases, the processing temperature should be kept as low as possible in order to avoid damaging sensitive substrates, such as polymers or nanostructures. Initially, flakes of monolayer MoS 2 were produced from natural MoS 2 crystals using micromechanical exfoliation, a topdown method capable of producing high-quality monolayers, albeit with poor throughput as well as limited control over flake thickness and dimensions. [4,30,31] Liquid-phase exfoliation of bulk crystals, on the other hand, offers good scalability, but often suffers from limited flake size, poor crystallinity, or contamination. [4,31,32] Bottom-up methods offer a more controllable way to produce MoS 2 films. High-quality MoS 2 thin films are most commonly deposited by chemical vapor deposition (CVD) or sulfurization of metal or metal oxide thin films. The most common Molybdenum disulfide (MoS 2 ) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS 2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS 2 thin films at a relatively low temperature of 300 °C. A new molybdenum precursor, Mo(thd) 3 (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H 2 S as the sulfur precursor. Self-limiting growth with a low growth rate of ≈0.025 Å cycle −1 , straightforward thickness control, and large-area uni...

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Section: Evaluation Of Published Mos 2 Processesmentioning

confidence: 90%

mentioning

confidence: 99%

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

111

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“…¥ÑÒËÓÑÄÂÐËÇ ÔÕÓÖÍÕÖÓ ÂÕÑÏÂÏË V ÅÓÖÒÒÞ (V, Nb) ÒÓËÄÑAEËÕ Í ÖÄÇÎËÚÇÐËá àÎÇÍÕÓËÚÇÔÍÑÌ ÒÓÑÄÑAEËÏÑÔÕË Ë ÍÑÐÙÇÐÕÓÂÙËË ÐÑÔËÕÇÎÇÌ ÊÂÓâAEÑÄ Ä ¥±®-ÏÂÕÇÓËÂÎÂØ Ä 20 Ë 40 ÓÂÊ ÔÑÑÕÄÇÕÔÕÄÇÐÐÑ [166,167].…”

Section: à2unclassified

Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties, and applications

Чернозатонский¹,

Artyukh²

2018

Phys.-Usp.

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³ ÒÑÏÑÜßá ÕÇÑÓËË ×ÖÐÍÙËÑÐÂÎÂ ÒÎÑÕÐÑÔÕË ÃÞÎË ÓÂÔÔÏÑÕÓÇÐÞ ÔÎÇAEÖáÜËÇ ÏÑÐÑØÂÎßÍÑÅÇÐËAEÞ: SnS, SnSe, GeS, GeSe, ÐÂÌAEÇÐÞ ËØ ÔÕÂÃËÎßÐÞÇ ÍÑÐ×ÑÓÏÂÙËË. ¿ÍÔÒÇ-ÓËÏÇÐÕÞ ÒÑÍÂÊÂÎË, ÚÕÑ AEÂÐÐÞÇ ÔÑÇAEËÐÇÐËâ ÖÔÕÑÌÚËÄÞ Í ÑÍËÔÎÇÐËá [52].³ÇÎÇÐËAE ÑÎÑÄÂ SnSe ì ÐÑÄÞÌ AEÄÖÏÇÓÐÞÌ ÏÂÕÇÓËÂÎ Ô ÐÇÒÓâÏÑÌ ÊÂÒÓÇÜÈÐÐÑÌ ÊÑÐÑÌ, ÓÂÄÐÑÌ 1Y45 à£, ÒÑAEÄËÉ-ÐÑÔÕßá 10000 ÔÏ 2 £ À1 Ô À1 , ÏÑAEÖÎÇÏ ÀÐÅÂ 20 ë 40 ¤±Â Ë ÔÄÇÓØÏÂÎÑÌ ÕÇÒÎÑÒÓÑÄÑAEÐÑÔÕßá (`3 £Õ Ï À1 ¬ À1 ÒÓË 300 ¬). Electronic states in quasi-two-dimensional (2D) metal and semiconductor crystals can have unusual characteristics and thus can exhibit unusual electronic and optical phenomena. In this paper, the results recently obtained for a new class of 2D compounds, transition metal dichalcogenides, are presented, including those on structure, preparation methods, electronic, mechanical and optical properties, defects and their inêuence on material properties, and conditions facilitating the formation of defects. The paper considers the unique properties of mono-and multilayer materials, examines their dependence on external factors, and discusses their further application prospects. Various applications of 2D transition metal dichalcogenides are described, ranging from nanolubricants, nanocomposites and biosensors to memory cells and supercapacitors to optoelectronic, spin and photovoltaic devices.

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“…The representative atomic structures of some 2D materials are shown in Fig. 1 (Tedstone et al, 2016). TMDs are generally denoted as MX 2 , where M is the transition metal (Mo, W, Ti, V, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…and X is a chalcogen (S, Se, Te, etc. ); these atoms are layered as X-M-X units by van der Waals bonding (Tedstone et al, 2016). Theoretically, there are 88 combinations of TMDs, but it was discovered using density functional theory (DFT) that only 44 stable monolayer or few-layer TMDs can exist stably (Ataca et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

Yoon

Lee

2017

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Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

Cited by 485 publications

References 71 publications

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties, and applications

Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

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Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

Cited by 485 publications

References 71 publications

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties, and applications

Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

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Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth