Magnetic Field Dependence of Even Hall Effect in n‐Ge

Abstract

The magnetic field dependences of the coefficient R̃ determining the even Hall effect are theoretically calculated and experimentally measured in n‐Ge at j ∥︁ [111] and H ∥︁ [110] in the magnetic field interval 0 ≦ H ≦ 35 kOe and in the range of dominant phonon scattering (at 77.4 °K). The results of the calculations are in quantitative agreement with experimental data. For the conditions of dominant phonon scattering it is shown theoretically and experimentally that the relation G = Ū(H)/UU = f(H) (where Ū(H) is the voltage of the even Hall effect and UH⟂ is the voltage determining the specific resistance of an investigated crystal in a transverse magnetic field of the same strength) is completely saturated in magnetic fields ≧ 15 kOe. This saturation is directly connected with the anisotropy parameter K. The saturation magnetic fields have considerably lower values than those (approximately 50 to 100 kOe) which are necessary for the saturation of the function M = ϱH∥︁H→∞(H). This fact advantageously distinguishes the proposed method of measurement of K from a formely known one, where M is used for this purpose.

Galvanothermomagnetic effects in anisotropic media

“…( 8 ) This means physically that the odd cbffects are non-dissipative, since they do not contribute to the rate of rise of the entropy.…”