Magnetic field mediated conductance oscillation in graphene p–n junctions

Cheng, Shu-guang

doi:10.1088/1361-648x/aab5e1

Cited by 4 publications

(4 citation statements)

References 57 publications

(160 reference statements)

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“…Previous studies have investigated the effect of the center region potential variation on the oscillatory behavior of the conductance G with ϕ in graphene p-n junctions. It is shown that the oscillatory behavior of the conductance G with ϕ is similar for different center region potential variations [45]. Thus in our model, the electric potential in the center region of p-n junction varies linearly from E L to E R .…”

Section: Model and Formulamentioning

confidence: 54%

“…If we adopt E L = −E R , we use V 0 = E L = −E R for simplicity. In the following discussion, we learned that the behavior of Kek graphene p-n junction conductance in the magnetic field could be classified into four regimes: quantum tunneling, transition regime, quasi-classical regime, and quantum Hall regime [45]. As an example, at V 0 = −0.12t, the behavior of the conductance oscillations is divided by the green line into four regions corresponding to four regimes.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

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The transport properties of Kekulé-ordered graphene p–n junction

Zhang,

Wang,

et al. 2023

New J. Phys.

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The transport properties of electrons in graphene p–n junction with uniform Kekulé lattice distortion have been studied using the tight-binding model and the Landauer–Büttiker formalism combined with the nonequilibrium Green’s function method. In the Kekulé-ordered graphene, the original K and Kʹ valleys of the pristine graphene are folded together due to the 3 × 3 enlargement of the primitive cell. When the chiral symmetry breaking of a valley leads to a single-valley phase, there are special transport properties of Dirac electrons in the Kekulé lattice. In the O-shaped Kekulé graphene p–n junction, Klein tunneling is suppressed, and only resonance tunneling occurs. In the Y-shaped Kekulé graphene p–n junction, the transport of electrons is dominated by Klein tunneling. When the on-site energy modification is introduced into the Y-shaped Kekulé structure, both Klein tunneling and resonance tunneling occur, and the electron tunneling is enhanced. Under strong magnetic fields, the conductance of O-shaped and on-site energy-modified Y-shaped Kekulé graphene p–n junctions is non-zero due to the presence of resonance tunneling. It is also found that the disorder can enhance conductance, with conductance plateaus forming in the appropriate range of disorder strength.

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Section: Model and Formulamentioning

confidence: 54%

Section: Numerical Results and Discussionmentioning

confidence: 99%

The transport properties of Kekulé-ordered graphene p–n junction

Zhang,

Wang,

et al. 2023

New J. Phys.

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“…However, there is some progress made in the understanding of the physical properties of graphene homogeneous p-n junction. [169][170][171] Furthermore, a variety of preparation methods [162][163][164][165][166][167]172] are also in the developmental phase.…”

Section: In-plane Graphene Homogeneous P-n Junctionmentioning

confidence: 99%

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Tian

Tang

Teng

et al. 2019

Adv Materials Technologies

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Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity and high specific surface area etc. Methodology for constructing p-n junction has becoming an important consideration in improving the performance of optoelectronic devices and broadening of its application in related fields. Currently, graphene based p-n junction has been explored and different structures have also been investigated. This review paper summaries the recent progress on graphene homogeneous p-n junction, ranging from preparation of front-end materials (e.g. p-and n-type graphene) to building of planar and vertical p-n junctions. Furthermore, p-n junction via electrical modulation is described. The requirements for building the graphene homogeneous p-n junction, and the advantages and drawbacks of the different structures of the p-n junction are also discussed. Finally, a preferential technique to fabricate high performance p-and n-type graphene and building of the p-n junction is evaluated. This paper therefore provides an important indication on the future direction on the application of graphene in optoelectronics. 2 ranging applications, such as logical rectifier circuit [10,11] , field-effect optoelectronic transistor [12-14] , multimode non-volatile memory [15] , rectifier memory [16,17] , optoelectronic storage [18,19] , photovoltaic device [20] , photodetector [21,22] and gas sensor [23,24] etc. Consequently, it is obvious to study new material system for the p-n junction that will enhance the performance of current devices and also lead to the development of new devices. In general, p-n junction can be categorized into heterojunction and homojunction. If same materials are used, the p-n junction is known as homogeneous junction or homojunction. There are many advantages of homogeneous p-n junction, for example, there is no issue on lattice mismatch, which will result in surface defects, since p and n layers are of the same materials. Moreover, the use of the same materials in homogeneous p-n junction leads to uniform energy band gap across the device structure, as shown in Figure 1a. Depletion region is formed at the junction between p and n regions, and the alignment of Fermi level (E f) promotes band bending at the depletion region when the same semiconducting materials are used to construct the p-n junction, as represented in Figure 1b. Such homogeneous p-n junction is of great significance in the field of optoelectronics. Figure 1c illustrates the charge transport mechanism under illumination. Upon radiation of light with certain wavelength (hυ ≧ Eg), electrons jump to conduction band in p, n and depletion regions. These electrons and holes arriving at the depletion region are subsequently swept into n-type and p-type regions respectively via the built-in field. As a result, current is generated and a certain voltage is produced due to the accumulation of charges under open circuit conditions. Furthermore, this lead...

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“…To form a charge carrier guider in the central region, larger values were set for the charge carrier density inside the channel than outside, which can be realized by tuning the gate voltages. The Hamiltonian in the tight-binding representation is written as [57,58]:…”

Section: Model and Metholdmentioning

confidence: 99%

The electronic transport efficiency of a graphene charge carrier guider and an Aharanov–Bohm interferometer

Wei

Zhang²,

Cheng³

2018

J. Phys.: Condens. Matter

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The electrostatic gating defined channel in graphene forms a charge carrier guider. We theoretically investigated electronic transport properties of a single channel and an Aharanov-Bohm (AB) interferometer, based on a charge carrier guider in a graphene nanoribbon. Quantized conductance is found in a single channel, and the guider shows high efficiency in the optical fiber regime, in good agreement with the experiment results. For an AB interferometer without a magnetic field, quantized conductance occurs when there are a few modes inside the channel. The local density of states (LDOS) inside the AB interferometer shows quantum scars when the scattering is strong. At low magnetic field, a periodical conductance oscillation appears. The conductance has a maximum value at zero magnetic field in the absence of intravalley scattering. The mechanism was investigated by LDOS calculations and a toy model.

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Magnetic field mediated conductance oscillation in graphene p–n junctions

Cited by 4 publications

References 57 publications

The transport properties of Kekulé-ordered graphene p–n junction

The transport properties of Kekulé-ordered graphene p–n junction

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

The electronic transport efficiency of a graphene charge carrier guider and an Aharanov–Bohm interferometer

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