Magnetic phase diagram for CuMn

Chouhan, Rajiv K.; Mookerjee, Abhijit

doi:10.1016/j.jmmm.2010.11.070

Cited by 10 publications

(4 citation statements)

References 49 publications

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“…5) is also observed in the $270-310 K temperature interval presumably caused by a magnetic transition. Gibbs 20 and Chouhan 21 showed in Cu-Mn alloys a transition from paramagnetic to a mixture of spin glass and antiferromagnetic states occurring below 200 K. A similar transition can be assumed in our samples, though the critical temperatures are higher. The structural differences between amorphous thin film and polycrystalline bulk samples can cause this kind of shift.…”

Section: Resultssupporting

confidence: 85%

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO2 substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40–80 at. % Mn range which was attributed to a magnetic transformation around 200–300 K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20–40 at. % and 70–80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r = 0.6–0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

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Section: Resultssupporting

confidence: 85%

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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“…Finally, note that the Cu/IrMn interface is surely more complex due to the formation of CuMn spin-glasses. [35][36][37] To conclude, in the context of AF-spintronics, the main contribution of the present study is the determination of FIG. 3.…”

Section: Fig 2 Dependence Of the Resonance Linewidth (Dh Pp )mentioning

confidence: 93%

Penetration depth and absorption mechanisms of spin currents in Ir₂₀Mn₈₀ and Fe₅₀Mn₅₀ polycrystalline films by ferromagnetic resonance and spin pumping

et al. 2014

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Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir 20 Mn 80 and Fe 50 Mn 50 are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir 20 Mn 80 and spin flipping for Fe 50 Mn 50. V

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“…We argue that Cu and Mn are indeed miscible and that CuMn alloys are known to lead to spin-glass phases. 11,17,23,24 In order to strengthen our findings and confirm that the effect is predominantly driven by layers intermixing and not by potential structural or roughness changes, we systematically performed measurements for the reversed structures. Figure 2 shows the results for Si/SiO 2 //Ta (3 nm)/Cu (3 nm)/ IrMn (7 nm)/Pt (t Pt )/Cu (t Cu )/Co (3 nm)/Pt (2 nm).…”

Section: A)mentioning

confidence: 53%

“…21) combined with the alternative use of a sufficiently low reference-T recently provided a method for probing the low-T contribution to DT B related to interfacial spin-glass. 12 We expect that inserting a copper/platinum (Cu/Pt) dual barrier between Co and IrMn will fulfil the manifold requirements of limiting the various species intermixing which takes place when using either no or single barriers [4][5][6][7]11,17,[23][24][25] and that this will translate into less glassy interfaces, i.e., into the observation of lower T B dispersions.…”

mentioning

confidence: 99%

Benefit of inserting a (Cu/Pt) intermixing dual barrier for the blocking temperature distribution of exchange biased Co/(Cu/Pt)/IrMn stacks

Akmaldinov

Auffret

Joumard

et al. 2013

Applied Physics Letters

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International audienceExchange bias based spintronics devices involve ferromagnetic/antiferromagnetic interfaces and concomitant layers intermixing. As a consequence, interfacial spin-glass-like phases with reduced properties and increased dispersions form and lower the device performance. It is therefore necessary to limit intermixing by introduction of diffusion barriers. One of the major difficulties is that the barrier must be inert. This paper uses blocking temperature distributions to quantify the interfacial quality of Co/IrMn based stacks. Inserting a (Cu/Pt) dual barrier fulfils the manifold requirements of limiting Co-Mn, Co-Pt, and Cu-Mn intermixing, which takes place when using either no or single Pt and Cu barriers, respectivel

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Magnetic phase diagram for CuMn

Cited by 10 publications

References 49 publications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Penetration depth and absorption mechanisms of spin currents in Ir₂₀Mn₈₀ and Fe₅₀Mn₅₀ polycrystalline films by ferromagnetic resonance and spin pumping

Benefit of inserting a (Cu/Pt) intermixing dual barrier for the blocking temperature distribution of exchange biased Co/(Cu/Pt)/IrMn stacks

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Magnetic phase diagram for CuMn

Cited by 10 publications

References 49 publications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Penetration depth and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 polycrystalline films by ferromagnetic resonance and spin pumping

Benefit of inserting a (Cu/Pt) intermixing dual barrier for the blocking temperature distribution of exchange biased Co/(Cu/Pt)/IrMn stacks

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Penetration depth and absorption mechanisms of spin currents in Ir₂₀Mn₈₀ and Fe₅₀Mn₅₀ polycrystalline films by ferromagnetic resonance and spin pumping