2012
DOI: 10.1103/physrevb.85.045131
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Magnetic phase diagram of MnSi in the high-field region

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Cited by 45 publications
(54 citation statements)
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“…Thus, R DG (T) behavior is driven by an interplay of these two effects and as a result, the value R DG (T) for Mn x Si 1-x (x ≈ 0.52) film below ∼ 40 K significantly exceeds R SC (T) for ε-MnSi, where R SC (T) falls down dramatically. 24 The physical origin of this remarkable phenomenon of simultaneous increase of carrier mobility and decrease of carrier concentration at the doping of single crystal ε-MnSi with additional Mn atoms is not yet clear. A possible (but certainly open to discussions) reason qualitatively explaining experimental data has been proposed in Ref.…”
Section: Discussionmentioning
confidence: 99%
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“…Thus, R DG (T) behavior is driven by an interplay of these two effects and as a result, the value R DG (T) for Mn x Si 1-x (x ≈ 0.52) film below ∼ 40 K significantly exceeds R SC (T) for ε-MnSi, where R SC (T) falls down dramatically. 24 The physical origin of this remarkable phenomenon of simultaneous increase of carrier mobility and decrease of carrier concentration at the doping of single crystal ε-MnSi with additional Mn atoms is not yet clear. A possible (but certainly open to discussions) reason qualitatively explaining experimental data has been proposed in Ref.…”
Section: Discussionmentioning
confidence: 99%
“…It presumes that: 1) the Mn doping induces the carrier localization on the defect center (e.g., the above discussed Si vacancy) in the MnSi matrix; 2) this doping also destroys collective (spin-polaron or Kondo type) resonance, probably existing in ε-MnSi single crystal. 24 The combination of these two effects obviously leads to the simultaneous decrease…”
Section: Discussionmentioning
confidence: 99%
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“…Although the calculated inflection points give a good first approximation of the phase transition lines as shown in this paper, the detailed comparison of several different thermodynamical quantities should improve the accuracy of phase transition lines as was demonstrated in Refs. [27,31] for MnSi.…”
Section: Appendix B: Simulation Methodsmentioning
confidence: 99%
“…The B − T phase diagram of MnSi has been extensively studied experimentally [7,[26][27][28][29][30][31][32] and by MCS [33]. In this system, the SkL is only stable at finite temperature and magnetic field, in a small pocket of the phase diagram.…”
Section: Introductionmentioning
confidence: 99%