2012
DOI: 10.1016/j.jallcom.2012.05.099
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Magnetic properties and high frequency characteristic of obliquely sputtered Co–M (M=V and Nb) thin films

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Cited by 11 publications
(3 citation statements)
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“…In brief, magnetic thin films are considered as the potential candidate for thin-film inductors with an aim to improve their M s , H k , ρ, and also compatibility with semiconductor manufacturing processes. Therefore, tremendous efforts have been devoted to developing better magnetic thin films over past decades [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…In brief, magnetic thin films are considered as the potential candidate for thin-film inductors with an aim to improve their M s , H k , ρ, and also compatibility with semiconductor manufacturing processes. Therefore, tremendous efforts have been devoted to developing better magnetic thin films over past decades [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…As the development of communications and information technology, the continous demands for miniaturization and integration of transforms, inductors, and other communication electromagnetic equipment. In addition, with the frequency of Radio Frequency Integrated Circuits (RFICs) increased to gigahertz (GHz), the research of high-frequency magnetic materials has been greatly promoted [1][2][3]. At the same time, the miniaturization, high frequency and integration of inductors are the key to realize magnetic electronic products [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…The dominate microwave performance in MMICs is ferromagnetic resonance frequency f FMR , while the key approach to enhance f FMR is to increase the anisotropy magnetic field H K , as described by Kittel equation [7]. Many preparation methods were proposed to obtain a high H K , such as in-situ magnetic field deposition [8,9], post magnetic annealing, oblique sputtering [10,11], exchange coupling between ferromagnetic (FM) layer and antiferromagnetic (AFM) layer or FM layer with higher coercivity [12,13], and magnetoelectric (ME) coupling [14,15]. In our previous work [16][17][18][19], a novel composition gradient sputtering (CGS) method was applied to achieve a high uniaxial magnetic anisotropy in SMFs, which dramatically increased the in-plane uniaxial H K to 547 Oe due to the uniaxial stress distribution induced by composition gradient.…”
Section: Introductionmentioning
confidence: 99%