Magnetic Properties and Magnetoresistance of Granular Evaporated Fe/Si Films

Abstract

The independent-atom model (IAM) together with partial waves has been used to study the eKect of the absorption potential on the elastic scattering of electrons bythe carbon tetrafluoride molecule in the incident energy range 100-700eV. The atom is represented by an optical potential which is complex, spherically symmetric and energy dependent. The differential, integral elastic and momentum transfer cross sections have been obtained. The present results are in good agreement with the available experimental data.

Ab Initio Study of Electric Transport and Interlayer Exchange Coupling in Fe-Si-Fe Systems

“…After 24 ML the MR still decreases with growing number of Si layers. It is obvious, however, that a reasonably large MR remains even for thick spacers, which is in disagreement with the known experimental …ndings [Tong et al (1999); Ihara et al (1999);Inomata et al (1995)]. It is suggested that the origin of this discrepancy is similar to what has been discussed in the case of the IEC.…”

“…In most systems these interdi¤usion e¤ects at the interfaces are important for the IEC and as well as for the transport properties [Gareev et al (2001); Ihara et al (1999)]. In order to study the in ‡uence of interdi¤usion additional investigations have been carried out for systems of the type where s is the total number of Si layers.…”

“…All MR ratios of Fe/Si multilayers or trilayers determined experimentally are rather small as compared to systems with metallic spacers [Mosca et al (1991); Parkin et al (1990) [Miyazaki and Tezuka (1995)]. Independent of the substrate which determines the growth direction the MR in Fe/Si systems ranges between 0.3 and 2:2 % [Highmore et al (1995); Tong et al (1999); Ihara et al (1999)]. At room temperature also negative values of the MR have been found [Inomata et al (1995); Ihara et al (1999)].…”

“…Independent of the substrate which determines the growth direction the MR in Fe/Si systems ranges between 0.3 and 2:2 % [Highmore et al (1995); Tong et al (1999); Ihara et al (1999)]. At room temperature also negative values of the MR have been found [Inomata et al (1995); Ihara et al (1999)]. Only very little theoretical work is devoted to the magnetoresistance of Fe/Si/Fe trilayers or multilayers in order to explain these extremely small values.…”

New type magnetoresistance in Co/Si systems

“…In particular, metal-semiconductor hybrid systems such as Fe/Si and GaAs/Co have been extensively studied because of their potential application in electronics [2][3][4][5]. Recently, Dinia et al [6] and Ihara et al [7] reported very small inverse magnetoresistance, where the resistance is smaller at zero field than the saturation field, in Fe/Si films.…”