PbLaZrTiO x (PLZT) thin films were fabricated on Pt(111) substrate by the sol-gel method for ferroelectric capacitors. Pt top electrodes were deposited by sputtering, aluminum-doped zinc oxide (AZO) or indium tin oxide (ITO) top electrodes were deposited by pulsed laser deposition (PLD) on PLZT capacitors. We compared both degradation characteristics by annealing in 200°C, 1Torr, 3% hydrogen atmosphere and fatigue properties, exhibited the PLZT capacitors with AZO and ITO top electrodes has better properties compared to the PLZT capacitors with Pt top electrodes.