Magnetic properties of MnGa2Se4 in the temperature range of 2–300K

Morocoima, M.; Quintero, M.; Quintero, E.; González, J.; Tovar, R.; Bocaranda, P.; Ruíz, J.; Marchan, N.; Caldera, D.; Calderón, E.; Woolley, J. C.; Lamarche, G.; Lamarche, A.-M.; Broto, J. M.; Rakoto, H.; D’Onofrio, L.; Cadenas, R.

doi:10.1063/1.2337255

Cited by 10 publications

(8 citation statements)

References 16 publications

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“…This magnetic behavior was associated with the Mn configuration on the respective crystal structure. More recently, 6 the magnetic phase diagram was determined and it was found that MnGa 2 Se 4 has a zero-field Néel temperature T N of 8.1 K, showing a triple point at 7.8 K and 2.2 T. In an earlier work, 7 the optical energy gap E g of MnGa 2 Se 4 has been measured as a function of pressure up to 13 GPa, and it was shown that the tetragonal ordered phase is a direct gap semiconductor ͑E g = 2.7 eV at 300 K͒. It was found that the direct energy gap increases linearly with the applied pressure at the rate of 2.5ϫ 10 −2 eV/ GPa up to 4.1 GPa.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic properties of the MnGa2Se4 compound under high pressure

Marquina

Power

Grima

et al. 2006

Journal of Applied Physics

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International audienceX-ray diffraction measurements on MnGa2Se4, a II-III2-VI4 magnetic semiconductor compound, are made as a function of pressure up to 25 GPa. It is found that in the range of 0P12 GPa the structure is a defect tetragonal; in the range between 12 and 14 GPa a two phase field +NaCl type exists. It is found that at about 14 GPa a transition to the cubic NaCl-type structure occurs and it appeared that this transition is irreversible. From the analysis of the x-ray diffraction lines, lattice parameter values are determined as a function of pressure. These results allow the evaluation of the compressibility coefficients of the corresponding parameters. The observed behavior of , a, and c with pressure are explained by using the relations proposed by Abrahams and Bernstein J. Chem. Phys. 52, 5607 1970. It is found that at about 3 GPa, a symmetry change, from an ordered tetragonal to a disordered tetragonal structure, occur

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Section: Introductionmentioning

confidence: 99%

Crystallographic properties of the MnGa2Se4 compound under high pressure

Marquina

Power

Grima

et al. 2006

Journal of Applied Physics

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“…1 shows a typical variation of 1 / with T for 2 K Ͻ T Ͻ 300 K obtained for the sample with z = 0.85, zero-field cooled ͑ZFC͒ ͑heating curve͒ and field cooled ͑fc͒ ͑cooling curve͒ data being shown. 5 This is attributed to the presence of a slight residual amount of disorder in the specimen, despite the very long anneal during preparation. 2͑a͒, it is seen that the peak at T N is slightly broadened and not as sharp as for an ideal semiconductor, this form was also observed for the MnGa 2 Se 4 sample.…”

Section: A Magnetic Susceptibility Measurementsmentioning

confidence: 99%

Magnetic properties of Zn1−zMnzGa2Se4 alloy system in the temperature range from 2to300K

Morocoima

Quintero

et al. 2006

Journal of Applied Physics

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Large magnetocaloric effects over a wide temperature range in MnCo1−xZnxGe Measurements of low field static magnetic susceptibility and of magnetization with pulsed magnetic fields up to 32 T have been made as a function of temperature on polycrystalline samples of the Zn 1−z Mn z Ga 2 Se 4 alloy system, which has a defect tetragonal chalcopyrite structure in the whole composition range. The resulting data have been used to give information on the magnetic spin-flop and magnetic saturation transitions, and details of the magnetic B-T phase diagrams were determined for the phases. The zero-field Néel temperatures T N and triple points, for the Zn 1−z Mn z Ga 2 Se 4 alloy system, have been found to be 8.1 K and ͑7.8 K, 2.2 T͒ for z = 1, 5.8 K and ͑5.6 K, 1.7 T͒ for z = 0.85, 4.5 K and ͑4.35 K, 1.0 T͒ for z = 0.075, and 3.9 K and ͑3.85 K, 0.5 T͒ for z = 0.7. The susceptibility ͑T͒ curves for B = 3 and 5 T show magnetothermal effects below 4.5 K.

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“…In the last few years, the emphasis in the study of these compounds has been on their structural [1], magnetic [2], and optical proper ties [3][4][5][6]. Figure 1 presents the current-voltage (I-V) char acteristics of the MnGa 2 Se 4 single crystals.…”

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Current-voltage characteristics of MnGa2Se4 single crystals

Тагиев

Asadullayeva

et al. 2012

Semiconductors

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field controlled lasers, light modulators, electric and optical memory elements, and other func tional optoelectronic devices. In the last few years, the emphasis in the study of these compounds has been on their structural [1], magnetic [2], and optical proper ties [3][4][5][6]. Figure 1 presents the current-voltage (I-V) char acteristics of the MnGa 2 Se 4 single crystals. The fol lowing portions are clearly distinguished:(i) sharp growth of current with voltage;(ii) sublinear dependence of current on voltage;(iii) quadratic dependence of current on voltage; and (iv) sharp growth of current with voltage. The observed feature of the I-V characteristics of the single crystal MnGa 2 Se 4 samples is typical of many high resistivity semiconductors and structures on their basis [7][8][9][10][11][12]. In the analysis of the I-V char acteristics of the single crystal MnGa 2 Se 4 samples (In-MnGa 2 Se 4 -In structures) measured in a wide electric field range, we took into account the presence of different portions clearly distinguished in the dependence of exponent α on the electric voltage applied to the structure when describing the I-V char acteristics in the form I ∝ V α .Using the I-V characteristics presented in Fig. 1, we determined the dependences α(V) for the MnGa 2 Se 4 single crystals; the results are shown in Fig. 2. It can be seen that at low voltages, α sharply decreases, passes through its minimum, and, with a further increase in voltage, attains its maximum value. We denote the minimum and maximum values of the differential power as α m and α M , respectively, and the corresponding currents and voltages as I m , V m and I M , V M . According to the data presented in Fig. 2, for the sample with the thickness L = 7 × 10 -3 cm and the contact area S = 4 × 10 -2 cm 2 , we determined the fol lowing extreme values at 300 K: α m = 0.6, I m = 10 -13 A, V m = 10.1 V, α M = 6.5, I M = 8 × 10 -12 A, and V M = 365 V.Similar results were obtained for other samples at different temperatures. Knowing the values of α m , I m , Abstract-The current-voltage characteristics of single crystal MnGa 2 Se 4 samples have been studied. The measurements have been performed in the electric field range from the range of validity of Ohm's law to 10 V/cm at temperatures of 300-400 K. The data obtained are discussed within the context of the theory of injection contact phenomena and field ionization of traps due to the Poole Frenkel effect.

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Magnetic properties of MnGa2Se4 in the temperature range of 2–300K

Cited by 10 publications

References 16 publications

Crystallographic properties of the MnGa2Se4 compound under high pressure

Crystallographic properties of the MnGa2Se4 compound under high pressure

Magnetic properties of Zn1−zMnzGa2Se4 alloy system in the temperature range from 2to300K

Current-voltage characteristics of MnGa2Se4 single crystals

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