2015
DOI: 10.1063/1.4913444
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Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer

Abstract: Magnetic spin structures in epitaxial BiFeO3 single layer and an epitaxial BaTiO3/BiFeO3 multilayer thin film have been studied by means of nuclear resonant scattering of synchrotron radiation. We demonstrate a spin reorientation in the 15 × [BaTiO3/BiFeO3] multilayer compared to the single BiFeO3 thin film. Whereas in the BiFeO3 film, the net magnetic moment m→ lies in the (1–10) plane, identical to the bulk, m→ in the multilayer points to different polar and azimuthal directions. This spin reorientation indi… Show more

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Cited by 28 publications
(35 citation statements)
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“…, along the ME voltage in longitudinal geometry. For more details and corresponding ME measurements on BiFeO 3 -based bulk samples and BiFeO 3 films, see [36] and [23], respectively.…”
Section: Methodsmentioning
confidence: 99%
“…, along the ME voltage in longitudinal geometry. For more details and corresponding ME measurements on BiFeO 3 -based bulk samples and BiFeO 3 films, see [36] and [23], respectively.…”
Section: Methodsmentioning
confidence: 99%
“…In addition, the SL period has been calculated from the distance between adjacent satellite peaks using the relationship L ¼ k=ð2Dh Á cos h B Þ, where k is the X-ray wavelength, Dh is the angular separation between two adjacent satellite peaks, and h B is the Bragg angle of the zero-order satellite peak. 15 More detailed structural insights are obtained by HR-TEM. Fig.…”
Section: A)mentioning
confidence: 99%
“…SrTiO 3 (STO) single crystals with (001) and (111) orientation and low miscut below 0. 15 were selected as substrates. Before the PLD process, substrates were etched in diluted hydrogen fluoride solution and annealed under oxygen atmosphere in order to obtain a surface terminated with terraced monolayer steps.…”
mentioning
confidence: 99%
“…The overall behavior of the ME coefficient curves for the BiFeO 3 -BaTiO 3 superlattices is in agreement with our previous work. 11,29 The ME coefficient increases with increasing magnetic field and saturates around 3 T for the sample containing 20 double layers and around 1 T for the other samples (Fig. 4).…”
mentioning
confidence: 99%
“…This strain is mechanically transferred to the magnetic component, inducing a magnetization change through the piezomagnetic effect. 10,11 Thin multilayered films with strong out-of-plane (OOP) magnetic anisotropy, i.e., magnetization aligned perpendicular to the film surface, are the best candidates for next-generation non-volatile memory. In such systems, there is a large energy barrier for magnetization switching, implying higher stability of the magnetization states, and lower critical current for spintransfer torque memory devices.…”
mentioning
confidence: 99%