2021
DOI: 10.1002/qute.202100063
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Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

Abstract: The ZrSiS family of compounds hosts various exotic quantum phenomena due to the presence of both topological nonsymmorphic Dirac fermions and nodal‐line fermions. In this material family, the LnSbTe (Ln = lanthanide) compounds are particularly interesting owing to the intrinsic magnetism from magnetic Ln which leads to new properties and quantum states. In this work, the authors focus on the previously unexplored compound SmSbTe. The studies reveal a rare combination of a few functional properties in this mate… Show more

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Cited by 15 publications
(27 citation statements)
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References 72 publications
(125 reference statements)
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“…If the position of E F were tuned, TbSbTe could evolve into a weak topological insulator (WTI) with a symmetry‐based indicator Z 2,2,2,4 = (0010), which is similar to the cases of SmSbTe, DySbTe, and HoSbTe. [ 7,29,33,42 ] Figure 3(d) gives the calculated values of SOC gaps varying from a small value of 27 meV at DNP1 along Γ ‐ X to a sizable value of 199 meV at DNP3 along Z ‐ R . Furthermore, the Fermi surfaces of TbSbTe were calculated, as demonstrated in Figure 3(e), consisting of one large hole pocket around Γ surrounded by one even larger enclosure‐shaped electron pocket.…”
Section: Resultsmentioning
confidence: 99%
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“…If the position of E F were tuned, TbSbTe could evolve into a weak topological insulator (WTI) with a symmetry‐based indicator Z 2,2,2,4 = (0010), which is similar to the cases of SmSbTe, DySbTe, and HoSbTe. [ 7,29,33,42 ] Figure 3(d) gives the calculated values of SOC gaps varying from a small value of 27 meV at DNP1 along Γ ‐ X to a sizable value of 199 meV at DNP3 along Z ‐ R . Furthermore, the Fermi surfaces of TbSbTe were calculated, as demonstrated in Figure 3(e), consisting of one large hole pocket around Γ surrounded by one even larger enclosure‐shaped electron pocket.…”
Section: Resultsmentioning
confidence: 99%
“…We fit the high-field linear 𝜌 xy (H) using Equation (3) and estimate the carrier density and mobility to be in the order of 1 × 10 21 cm −3 and ≈20 -50 cm 2 V −1 s −1 , respectively. The carrier density is lower than that of the conventional metals but comparable to that of some RSbTe [27,29,59] compounds and larger than nonmagnetic ZrSiS-type semimetals. [51,55,56,60,61] The relatively high carrier density in TbSbTe also reflects the nature of Dirac crossings along the nodal lines.…”
Section: Resultsmentioning
confidence: 99%
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“…The magnetism in this material is strongly anisotropic with the easy axis within the tetragonal a-b plane. Besides, there are reports on the electronic and crystal structure (including complex superstructures) and magnetic and transport properties of LaSbTe, 22,23 SmSbTe, 24,25 and NdSbTe. 26,27 The aim of this work is to understand the nature of the magnetically ordered phases in magnetic LnSbTe materials and to link it with the electronic structure.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The magnetism in this material is strongly anisotropic with the easy axis within the tetragonal a-b plane. Besides, there are reports on the electronic and crystal structure (including complex superstructures) and magnetic and transport properties of LaSbTe, , SmSbTe, , and NdSbTe. , …”
Section: Introductionmentioning
confidence: 99%