Magnetic two-dimensional electron gas at the manganite-buffered 
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 interface

Zhang, H. R.; Zhang, Y.; Zhang, Hongrui; Zhang, J.; Shen, Xi; Guan, Xiangxiang; Chen, Yunzhong; Yu, Richeng; Pryds, Nini; Chen, Y. S.; Shen, Baogen; Sun, J. R.

doi:10.1103/physrevb.96.195167

Cited by 38 publications

(25 citation statements)

References 33 publications

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“…The possible 2D magnetic ground state at LAO/STO has attracted great interest, although it remains elusive whether the ground state of the LAO/STO system is ferromagnetic. One of the common strategies to introduce ferromagnetism in LAO/STO is through the magnetic proximity effect where magnetic dopants are used to induce or enhance the magnetic state in their vicinity . Anomalous Hall effect provides strong evidence of coupling between itinerant electrons and magnetic moments, as shown in Figure .…”

Section: Magnetic Fieldmentioning

confidence: 99%

“…In this case, Mn ions provides a magnetic scattering center with the local magnetic moment on Mn 2+ or Mn 3+ . However, these spin‐polarized electrons have been detected often in the high carrier density range where both the d xy and d xz /d yz electrons are populated . Based on the ferromagnetism of LMO thin films on the STO, Gan et al later detected the anomalous Hall effect in oxide interfaces of LaAl 0.7 Mn 0.3 O 3 /STO where only the d xy band are populated …”

Section: Magnetic Fieldmentioning

confidence: 99%

Section: Magnetic Fieldmentioning

confidence: 99%

“…In addition, the large tunability of the conductivity at the interface when simultaneously applying light and a gate bias provides the possibility to explore the photo‐controlled Rashba spin‐orbit coupling and related quantum phases, as well as all‐oxide spintronic devices. Furthermore, since magnetism has been observed and can be tuned by electrostatic gating in STO‐based heterostructures, the question remains whether magnetism can also be conveniently induced and tailored by light. Antiferromagnetism induced using light irradiation has already been predicted in STO‐based systems .…”

Section: Light/matter Interactionmentioning

confidence: 99%

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Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Christensen

Trier

Niu

et al. 2019

Adv Materials Inter

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Oxides are an exciting class of electronic materials which share key properties with conventional semiconductors, but also bring new intrinsic functionalities that are not used in most current electronics: superconductivity, ferro-, pyro-, and piezoelectricity, ferromagnetism, and multiferrocity. Among the large number of oxides, strontium titanate (SrTiO 3 , STO) has been the center of attention in numerous studies for more than half a century. STO both serves as a popular template for epitaxial growth of oxide thin films as well as by itself exhibiting an attractive palettes of properties, including Numerous of the greatest inventions in modern society, such as solar cells, display panels, and transistors, rely on a simple concept: An external stimulus is applied to a material and the response is then utilized. Oxides often exhibit a colorful palette of responses to external stimuli due to the close coupling between lattice, spin, orbital, and charge degrees of freedom. In particular, oxide heterostructures where oxide thin films are deposited on SrTiO 3 have proven to be a fertile playground for material scientists, and a vast amount of interesting theoretical and experimental studies showcase the wide tunabilities of these heterostructures when subjected to external stimuli. Here, the authors review how the properties of SrTiO 3 -based heterostructures can be changed by external stimuli using electric fields, magnetic fields, light, stress, particle bombardment, liquids, gases, and temperature. The application of a single stimulus or several stimuli combined often leads to unexpected changes in properties which can open up for designing new devices as well as expanding the boundaries of our understanding within fundamental science. Hall of Fame Article is a research scientist at the Technical University of Denmark, Department of Energy Conversion and Storage. He received his B.Sc. (2009) and M.Sc. (2012) in nanoscience from the University of Copenhagen, followed by his Ph.D. (2017) and postdoc (2018) from the Technical University of Denmark. His work is currently focused on the physics of oxide materials and oxide devices for information technology and energy harvesting, including oxide electronics, memristors, internet of things, and thermoelectricity. Felix Trier is a postdoctoral researcher at CNRS/Thales, University Paris-Saclay. He obtained his B.Sc. (2009) and M.Sc. (2012) in nanoscience from the University of Copenhagen. Then he earned his Ph.D. degree (2016) from the Technical University of Denmark. His current research is focused on fabrication and characterization of metallic oxide heterointerface devices for the study of the spin-charge interconversion in 2D Rashba systems. His work concerns the LaAlO 3 /SrTiO 3 heterointerface 2D metal and its electrostatic tunability.Nini Pryds is a Professor and head of the research section "Functional Oxides" at the Department of Energy Conversion and Storage, Technical University of Denmark (DTU), where he is leading a group of researchers working in the field...

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Section: Magnetic Fieldmentioning

confidence: 99%

Section: Magnetic Fieldmentioning

confidence: 99%

Section: Magnetic Fieldmentioning

confidence: 99%

Section: Light/matter Interactionmentioning

confidence: 99%

See 2 more Smart Citations

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Christensen

Trier

Niu

et al. 2019

Adv Materials Inter

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“…Specifically, a ETO layer at the interface, resulted in a conducting and ferromagnetic (FM) LAO/ETO/STO heterostructure [9], with net spin-polarized charge carriers induced in the 2DEG [10]. Similarly, a interfacial manganite layer with controlled interdiffusion gave rise to gate tunable anomalous Hall effect and enhanced mobility in the 2DEG [11]. In [12], the role of charge polarity of SrO and LaO atomic layers in the charge transfer across a sandwiched MnO 2 layer was demonstrated, resulting in a 2D ferromagnetic metallic state in the case that MnO 2 is stacked between two LaO layers.…”

Section: Introductionmentioning

confidence: 99%

Study of equilibrium carrier transfer in LaAlO₃/SrTiO₃ from an epitaxial La_1−xSr _xMnO₃ ferromagnetic layer

et al. 2018

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Using x-ray magnetic circular dichroism and ab-initio calculations, we explore the La 1−x Sr x MnO 3 /LaAlO 3 /SrTiO 3 (001) heterostructure as a mean to induce transfer of spin polarized carriers from ferromagnetic La 1−x Sr x MnO 3 layer into the 2DEG (two-dimensional electron gas) at the LaAlO 3 /SrTiO 3 interface. By out-of-plane transport measurements, the tunneling across the LaAlO 3 barrier is also analyzed. Our results suggest small or vanishing spin-polarization for the 2DEG: magnetic dichroism does not reveal a neat signal on Ti atoms, while calculations predict, for the pristine stoichiometric interface, a small spin-resolved mobile charge of 2.5×10 13 cm −2 corresponding to a magnetic moment of 0.038 μ B per Ti atom, tightly confined within the single SrTiO 3 layer adjacent to LaAlO 3 . Such a small magnetization is hard to be detected experimentally and perhaps not robust enough to survive to structural disorder, native doping, or La 1−x Sr x MnO 3 dead-layer effects. Our analysis suggests that, while some spin-diffusion cannot be completely ruled out, the use of ferromagnetic La 1−x Sr x MnO 3 epilayers grown on-top of LaAlO 3 /SrTiO 3 is not effective enough to induce robust spin-transport properties in the 2DEG. The examined heterostructure is nevertheless an excellent test-case to understand some fundamental aspects of the spin-polarized charge transfer in 2D wells.

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X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces

Chikina

Caputo

Naamneh

et al. 2019

Adv Funct Materials

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Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

Cited by 38 publications

References 33 publications

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Study of equilibrium carrier transfer in LaAlO₃/SrTiO₃ from an epitaxial La_1−xSr _xMnO₃ ferromagnetic layer

X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces

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Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

Cited by 38 publications

References 33 publications

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3‐Based Heterointerfaces with External Stimuli

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3‐Based Heterointerfaces with External Stimuli

Study of equilibrium carrier transfer in LaAlO3/SrTiO3 from an epitaxial La1−x Sr x MnO3 ferromagnetic layer

X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces

Contact Info

Product

Resources

About

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Stimulating Oxide Heterostructures: A Review on Controlling SrTiO₃‐Based Heterointerfaces with External Stimuli

Study of equilibrium carrier transfer in LaAlO₃/SrTiO₃ from an epitaxial La_1−xSr _xMnO₃ ferromagnetic layer

X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO₃ Interfaces