Magnetism in Au-Supported Planar Silicene

Krawiec, Mariusz; Stȩpniak-Dybala, Agnieszka; Bobyk, A.; Zdyb, R.

doi:10.3390/nano11102568

Cited by 5 publications

(3 citation statements)

References 51 publications

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“…Our calculations suggest that the metal character of germanene, including the occupation of the states and the shifting of the Dirac cone with respect to the Fermi level, increases with increasing the degree of flatness of the monolayer. This point is particularly appealing in view of some recently reported planar silicene structures 24 , 25 , which suggests directing more efforts towards the synthesis of flat germanene phases for applications to terahertz device technology.…”

Section: Discussionmentioning

confidence: 99%

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

Sindona

Gomez

Pisarra³

2022

Sci Rep

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The search for connections between electronic and structural features is a key factor in the synthesis of artificial materials for on-demand applications, with graphene and analogous elemental semimetals playing a distinguished role as building blocks of photonic and plasmonic systems. In particular, a diversity of arrangements and electronic-state dispersions is offered by currently synthesized two-dimensional allotropes of silicon and germanium, respectively known as silicene and germanene. These monolayers make the ideal playground to understand how their collective and single-particle electronic states, excited by electron or light beams, may be controlled by geometry rather than doping or gating. Here, we provide such a study using time-dependent density-functional theory, in the random-phase approximation, to identify the structural dependent properties of charge-density plasmon oscillations and optical absorption in flat to buckled silicene and germanene lattices. We further single out flat germanene as an unprecedented two-dimensional conductor, hosting Dirac cone fermions in parallel with metal-like charge carriers, which contribute to strong intraband plasmon modes and one-electron excitations in the far-infrared limit. Finally, we show how this atypical scenario can be tuned by external stress or strain.

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Section: Discussionmentioning

confidence: 99%

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

Sindona

Gomez

Pisarra³

2022

Sci Rep

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“…The typical spin-orbit energy in silicene has been experimentally estimated as λ so ∼ 4 meV and the buckling parameter is approximately 2l ∼ 0.46 Å [44]. Antiferromagnetism in hexagonal lattices can be introduced by the proximity effect or doping on the substrate [59][60][61]. It has been experimentally demonstrated that the antiferromagnetic exchange field can be induced in silicene via the proximity coupled to the (111) surface of the antiferromagnetic insulator BiFeO 3 .…”

Section: Experimental Feasibilitymentioning

confidence: 99%

Theoretical valley-polarized subgap transport and intravalley pairing states in a silicene-based antiferromagnet–superconductor junction

Ding,

Wang,

Huang

et al. 2024

J. Phys. D: Appl. Phys.

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We theoretically study the valley-polarized subgap transport and intravalley pairing states in silicene-based antiferromagnet/superconductor (AF/SC) junctions. It is found that in the absence of an electric field, the antiferromagnetic order induced in silicene can give rise to valley-polarized states that strongly affect the subgap conductance. With the increasing antiferromagnetic exchange field, the gap-edge Andreev-resonant peak is replaced by broadened features for the Homo-SC model whereas by a sharp conductance dip for the Bulk-SC one. This significant difference arises from the intravalley Andreev reflection caused by the valley-mixing scattering in the Bulk-SC model, which can be enhanced by the antiferromagnetic order. Particularly, this intravalley pairing process can be switched on or off by adjusting the spin polarization through the electric field applied in the AF region. Our findings not only pave a new road to employ antiferromagnetic materials in valleytronics, but also facilitate the verification and detection of potential intravalley pairing state and valley polarization in silicene.

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“…The cross of the π-π* band, in turn, determines its desired physical properties. According to theoretical studies, it is possible to transform silicene into a magnetic form and use this material in spintronics applications as a spin filter or spin transistor [39][40][41]. Thanks to spin-orbit coupling and, in consequence, the relatively easy tunable bandgap, not feasible for graphene, silicene may also be considered as a valley filter in valleytronics [42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films—LEEM and LEED Studies

Jaroch

Zdyb

2022

Materials

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The formation and evolution of silicene on ultrathin Au films have been investigated with low energy electron microscopy and diffraction. Careful control of the annealing rate and temperature of Au films epitaxially grown on the Si(111) surface allows for the preparation of a large scale, of the order of cm2, silicene sheets. Depending on the final temperature, three stages of silicene evolution can be distinguished: (i) the growth of the low buckled phase, (ii) the formation of a layered heterostructure of the low buckled and planar phases of silicene and (iii) the gradual destruction of the silicene. Each stage is characterized by its unique surface morphology and characteristic diffraction patterns. The present study gives an overview of structures formed on the surface of ultrathin Au films and morphology changes between room temperature and the temperature at which the formation of Au droplets on the Si(111) surface occurs.

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Magnetism in Au-Supported Planar Silicene

Cited by 5 publications

References 51 publications

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

Theoretical valley-polarized subgap transport and intravalley pairing states in a silicene-based antiferromagnet–superconductor junction

Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films—LEEM and LEED Studies

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