Magnetism of (Zn,Co)O thin films probed by x-ray absorption spectroscopies

Rode, Karsten; Mattana, R.; Anane, A.; Cros, Vincent; Jacquet, Éric; Contour, J. P.; Pétroff, F.; Fert, A.; Arrio, Marie‐Anne; Sainctavit, Philippe; Benčok, P.; Wilhelm, F.; Brookes, N. B.; Рогалев, А.

doi:10.1063/1.2829610

Cited by 64 publications

(39 citation statements)

References 16 publications

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“…2 The ferromagnetic ordering temperature for III-Vbased DMSs, such as Mn-doped GaAs, is well below room temperature ͑RT͒ because the Curie temperature is typically below 160 K. 3 RT ferromagnetism in ZnO has been theoretically predicted to be realizable by 3d transition-metal ͑TM͒ doping, 4 and so many thin films and nanoparticles of ZnObased DMSs have been reported upon. [5][6][7][8][9][10][11][12][13][14][15] Ferromagnetism above RT has been observed in ZnO DMSs with 5-9,11-14 or even without 15 TM doping. However, the presented data were plagued by instability and a lack of reproducibility.…”

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confidence: 97%

Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films

Hsu²,

Tzeng

et al. 2009

Applied Physics Letters

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Metallic (Co, Ga)-codoped ZnO single crystalline films have been grown by molecular beam epitaxy. Besides room temperature ferromagnetism, the anomalous hall effect (AHE) due to spin-orbit interaction was also found. The small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic ferromagnetism in a true diluted magnetic oxide with charge carrier spin polarization. Both the saturation magnetization and AHE can be significantly enhanced by additional carrier doping, revealing that the ferromagnetism is carrier mediated in (Co, Ga)-codoped ZnO films.

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confidence: 97%

Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films

Hsu²,

Tzeng

et al. 2009

Applied Physics Letters

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“…Dietl's prediction, that the ferromagnetism at high temperature can be obtained in many wide band gap semiconductors such as ZnO, GaAs, GaN when doped with diluted transition metals can show ferromagnetism above room temperature, has attracted considerable research interest [2][3][4][5][6][7][8][9][10][11][12][13][14]. Following it, there has been intense searching for ferromagnetic ordering in doped dilute magnetic semiconductors (DMS's) focusing on possible spin-transport properties, which has many potentially interesting device applications.…”

Section: Introductionmentioning

confidence: 99%

Study of ferromagnetism in Mn doped ZnO dilute semiconductor system

Singhal

Dhawan

Gaur

et al. 2009

J. Phys.: Conf. Ser.

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“…On the other hand, there are some reports that the Co 3d electrons are not the origins of the ferromagnetism 19 or that metallic Co atoms contribute to the ferromagnetism. 20 Since the magnetic behavior of Zn 1−x Co x O may be affected by extrinsic factors such as secondary phases and defects, systematic XMCD measurements on well-defined Zn 1−x Co x O thin films will provide us with useful insight into the magnetism.…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductorZn1−xCoxO

et al. 2010

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The magnetic properties of Zn 1−x Co x O ͑x = 0.07 and 0.10͒ thin films, which were homoepitaxially grown on a ZnO͑0001͒ substrates with varying relatively high oxygen pressure, have been investigated using x-ray magnetic circular dichroism ͑XMCD͒ at Co 2p core-level absorption edge. The line shapes of the absorption spectra are the same in all the films and indicate that the Co 2+ ions substitute for the Zn sites. The magneticfield and temperature dependences of the XMCD intensity are consistent with the magnetization measurements, indicating that except for Co there are no additional sources for the magnetic moment, and demonstrate the coexistence of paramagnetic and ferromagnetic components in the homoepitaxial Zn 1−x Co x O thin films, in contrast to the ferromagnetism in the heteroepitaxial Zn 1−x Co x O films studied previously. The analysis of the XMCD intensities using the Curie-Weiss law reveals the presence of antiferromagnetic interaction between the paramagnetic Co ions. Missing XMCD intensities and magnetization signals indicate that most of Co ions are nonmagnetic probably because they are strongly coupled antiferromagnetically with each other. Annealing in a high vacuum reduces both the paramagnetic and ferromagnetic signals. We attribute the reductions to thermal diffusion and aggregation of Co ions with antiferromagnetic nanoclusters in Zn 1−x Co x O.

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Magnetism of (Zn,Co)O thin films probed by x-ray absorption spectroscopies

Abstract: Articles you may be interested inCoexistence of intrinsic and extrinsic origins of room temperature ferromagnetism in as implanted and thermally annealed ZnO films probed by x-ray absorption spectroscopy

Cited by 64 publications

References 16 publications

Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films

Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films

Study of ferromagnetism in Mn doped ZnO dilute semiconductor system

Antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductorZn1−xCoxO

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