While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field (Hex) in AFM-Mn3AN/ferromagnet-Co3FeN bilayers. An applied pulse current can manipulate Hex with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant τ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of Hex, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.