Magnetizing angle dependence of planar Hall resistance in spin-valve structure

Thành, Nguyễn Trung; Chun, M. G.; Schmalhorst, Jan-Michael; Reiss, Günter; Kim, K. Y.; Kim, C. G.

doi:10.1016/j.jmmm.2006.01.186

Cited by 12 publications

(10 citation statements)

References 8 publications

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“…(b) Measurement setup combining AC and DC field components for sensor characterization and for probing the signal of superparamagnetic labels on the PHE sensor. The angular dependence that the PHE voltage profile exhibits in the ring sensor is similar to that in the cross-junction sensor; 25 thus, the single-domain model used in these calculations is convincing.…”

Section: Resultsmentioning

confidence: 57%

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Planar Hall ring sensor for ultra-low magnetic moment sensing

Hung

Terki

Kamara

et al. 2015

Journal of Applied Physics

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The field sensitivity of a planar Hall effect (PHE) micro-ring type biosensor has been investigated as a function of magnetizing angle of the sensor material, for the sensing of low magnetic moment superparamagnetic labels. The field sensitivity is maximal at a magnetizing angle of α = 20°. At this optimized magnetizing angle, the field sensitivity of a PHE sensor is about 3.6 times higher than that measured at the conventional configuration, α = 90°. This optimization enables the PHE-ring sensor to detect superparamagnetic biolabels with ultra-low magnetic moments down to 4 × 10−13 emu.

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Section: Resultsmentioning

confidence: 57%

“…This hysteresis relates to the domain wall motion at low magnetizing angle and would be reduced when increasing the applied field angle, a, from the easy axis of the sensor. 24,25 The inset in Fig. 2(a) shows the calculated hysteretic width of a PHE voltage profile as a function of a.…”

Section: Resultsmentioning

confidence: 99%

Planar Hall ring sensor for ultra-low magnetic moment sensing

Hung

Terki

Kamara

et al. 2015

Journal of Applied Physics

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“…The film was capped with a thin Ta layer (5 nm) to prevent oxidation. The bilayer structure was exchange-coupled and had negligible hysteresis for magnetic fields perpendicular to the exchange bias [ 44 , 45 ]. A uniform magnetic field of 25 mT was applied in the film plane during the deposition to induce the magnetic anisotropy in the ferromagnetic layer to define the exchange bias direction in the bilayer structure.…”

Section: Methodsmentioning

confidence: 99%

Bridge Resistance Compensation for Noise Reduction in a Self-Balanced PHMR Sensor

Lee

Jeon

et al. 2021

Sensors

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Advanced microelectromechanical system (MEMS) magnetic field sensor applications demand ultra-high detectivity down to the low magnetic fields. To enhance the detection limit of the magnetic sensor, a resistance compensator integrated self-balanced bridge type sensor was devised for low-frequency noise reduction in the frequency range of 0.5 Hz to 200 Hz. The self-balanced bridge sensor was a NiFe (10 nm)/IrMn (10 nm) bilayer structure in the framework of planar Hall magnetoresistance (PHMR) technology. The proposed resistance compensator integrated with a self-bridge sensor architecture presented a compact and cheaper alternative to marketable MEMS MR sensors, adjusting the offset voltage compensation at the wafer level, and led to substantial improvement in the sensor noise level. Moreover, the sensor noise components of electronic and magnetic origin were identified by measuring the sensor noise spectral density as a function of temperature and operating power. The lowest achievable noise in this device architecture was estimated at ~3.34 nV/Hz at 100 Hz.

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“…The list of search keywords for publication statistics of parallel and perpendicular anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunnelling magnetoresistive (TMR) sensors is shown in Table II. Here, the perpendicular AMR refers to the planar Hall magnetoresistance/resistance effect [212][213][214][215][216][217][218]. The number of publications of GMR sensors exhibits an explosive growth after the discovery of GMR effect in 1988 [1,2].…”

Section: Roadmap Development Methodologymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

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Magnetizing angle dependence of planar Hall resistance in spin-valve structure

Cited by 12 publications

References 8 publications

Planar Hall ring sensor for ultra-low magnetic moment sensing

Planar Hall ring sensor for ultra-low magnetic moment sensing

Bridge Resistance Compensation for Noise Reduction in a Self-Balanced PHMR Sensor

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

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