Magneto-ionic control of interfacial magnetism

Bauer, Uwe; Yao, Lide; Tan, Andy; Agrawal, Parnika; Emori, Satoru; Tuller, Harry L.; Dijken, Sebastiaan van; Beach, Geoffrey S. D.

doi:10.1038/nmat4134

Cited by 488 publications

(574 citation statements)

References 35 publications

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“…In such systems, it has been shown that exchange interactions between spins of V 2+ and upper π * subband of TCNE lead to linear MR 64,65 . Thus electron-doped nickelates presents itself as a system with tunable magnetotransport mediated by ionic doping and could be of potential interest in the growing field of magneto-ionic devices 66 .…”

Section: Resultsmentioning

confidence: 99%

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

et al. 2016

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We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electrondoped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Un-doped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear non-saturating positive MR∼ 0.2 % at 50 K . The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.

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Section: Resultsmentioning

confidence: 99%

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

et al. 2016

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“…The physical mechanisms of the purely electronic VCMA effect have been interpreted as the modification of the electronic structure at the interface through charge accumulation/depletion, [21][22][23] an electricfield-induced magnetic dipole 24 or the Rashba effect. 25 Chemical effects, such as a voltage-induced redox reaction, 26 or other electromigration 27 or charge trapping 28 effects can show a substantial VCMA coefficient of the order of a few thousands of fJ Vm − 1 , which is defined as the induced surface anisotropy energy change per unit electric field. However, these mechanisms have drawbacks of limited operational speed and writing endurance.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access memory devices. A practical approach to achieve voltage control is the electrical modulation of the spin-orbit interaction at the interface between 3d-transition-ferromagnetic-metal and dielectric layers in a magnetic tunnel junction (MTJ). However, we need to initiate a new guideline for materials design to improve both the voltage-controlled magnetic anisotropy (VCMA) and perpendicular magnetic anisotropy (PMA). Here we report that atomic-scale doping of iridium in an ultrathin Fe layer is highly effective to improving these properties in Fe/MgO-based MTJs. A large interfacial PMA energy, K i,0 , of up to 3.7 mJ m − 2 was obtained, which was 1.8 times greater than that of the pure Fe/MgO interface. Moreover, iridium doping yielded a huge VCMA coefficient (up to 320 fJ Vm − 1 ) as well as high-speed response. First-principles calculations revealed that Ir atoms dispersed within the Fe layer play a considerable role in enhancing K i,0 and the VCMA coefficient. These results demonstrate the efficacy of heavy-metal doping in ferromagnetic layers as an advanced approach to develop high-density voltage-driven spintronic devices. NPG Asia Materials (2017) 9, e451; doi:10.1038/am.2017.204; published online 5 December 2017 INTRODUCTIONSpintronic devices, such as a magnetoresistive random-access memory device using a MgO-based magnetic tunnel junction (MTJ), 1,2 are expected to reduce the standby power of future computing systems by utilizing the non-volatile feature of magnetism. However, one significant challenge emerges from reducing the energy for information writing: magnetization switching. This issue is caused by electriccurrent-based operations of spintronic devices using electric-currentinduced magnetic fields, spin-transfer torque (STT) and spin-orbit torque based on the spin Hall effect rather than the electric-field-based operations presently used for semiconductor devices. For example, recent developments of STT-magnetoresistive random access memory have achieved~100 fJ per bit writing energies, 3 which corresponds to 10 7 k B T, where k B is the Boltzmann constant and T is the temperature (assumed to be 300 K here). In contrast, the energy required for maintaining magnetic information, that is, thermal stability, is between 60 k B T and 100 k B T. This large energy gap between data writing and retention, on the order of 10 5 , mainly originates

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“…Various studies have been published on electric-field-controlled magnetic effects in recent years, including magnetic domain wall propagation, 1-8 magnetic phase transitions, [9][10][11][12] spin polarization, 13,14 magnetic anisotropy [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] and exchange bias. [33][34][35][36][37] Electric-field control of perpendicular magnetic anisotropy (PMA) would open up new prospects for the realization of high-density magnetic memory and logic technologies operating at low energy consumption levels.…”

Section: Introductionmentioning

confidence: 99%

Electric-field switching of perpendicularly magnetized multilayers

et al. 2015

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Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile magnetic random access memories. Writing and erasing of information in these devices is implemented by magnetization switching in local magnetic fields or via intense pulses of electric current. Improvements in energy efficiency could be obtained when the reorientation of perpendicular magnetization is controlled by an electric field. Here, we report on reversible electric-field-driven out-of-plane to in-plane magnetization switching in Cu/Ni multilayers on ferroelectric BaTiO 3 at room temperature. Fully deterministic magnetic switching in this hybrid material system is based on efficient strain transfer from ferroelastic domains in BaTiO 3 and the high sensitivity of perpendicular magnetic anisotropy in Cu/Ni to electric-field-induced strain modulations. We also demonstrate that the magnetoelectric coupling effect can be used to realize 180°magnetization reversal if the out-of-plane symmetry of magnetic anisotropy is temporarily broken by a small magnetic field.

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Magneto-ionic control of interfacial magnetism

Cited by 488 publications

References 35 publications

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Electric-field switching of perpendicularly magnetized multilayers

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