Magneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substrates

Abstract

The properties of single site-controlled InGaAsN quantum wires (QWRs)-both untreated and irradiated with atomic hydrogen-are probed by micro-magnetophotoluminescence spectroscopy. The strong anisotropy of the diamagnetic shift measured for different orientations of the applied magnetic field confirms the one-dimensional nature of the QWR carrier wave function. In addition, the strain reduction associated with N incorporation is found to promote a larger indium intake in the QWR, enabling the realization of site-controlled QWRs emitting at long ( 1.3 μm), technologically relevant wavelengths.

Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires

“…The extent of such Hinduced blueshift is consistent with an initial N concentration of $1% in the wires. 24 Moreover, the energy position ($1.11 eV) of the QWR peak in the hydrogenated InGaAsN sample [labeled as InGaAsN:H in Fig. 1(c)] suggests an In concentration of at least $40%, considerably higher than the 25%-30% estimated for a reference InGaAs QWR sample in Refs.…”

“…Recently, this method was paired to the large band-gap bowing typical of dilute-nitride materials 22 to grow high-quality InGaAsN QWRs that emit at $1.3 lm at room temperature and are thus naturally suited for the integration with nanophotonic devices operating in the telecommunications window. 23 Shortly afterwards, Felici et al 24 confirmed the 1D character of the carrier wave function in InGaAsN V-groove QWRs, by measuring the anisotropy of the diamagnetic shift of the QWR emission for different orientations of the applied magnetic field. 19 In the same work, the well-known capability of hydrogen to passivate nitrogen impurities in III-N-V alloys [25][26][27] was exploited to selectively "turn off" the effects of N incorporation by H irradiation, thus providing a way to separately estimate the concentration of N ($1%) and In ($40%) in the QWRs, as well as the effective wire thickness and width (both $10-15 nm).…”

“…19 In the same work, the well-known capability of hydrogen to passivate nitrogen impurities in III-N-V alloys [25][26][27] was exploited to selectively "turn off" the effects of N incorporation by H irradiation, thus providing a way to separately estimate the concentration of N ($1%) and In ($40%) in the QWRs, as well as the effective wire thickness and width (both $10-15 nm). 24 In the present study, the optical properties of the same dilute-nitride InGaAsN/GaAs V-groove QWRs-both untreated and irradiated with atomic hydrogen-are investigated by polarization-dependent photoluminescence (PL) measurements. The studied samples were grown on semiinsulating (001) GaAs substrates, patterned with a 1 lmpitch array of V-grooves (groove width: 300 nm) oriented along the ½1 10 crystallographic direction.…”

“…1(a)], indeed, the release of the compressive strain present in the InGaAsN layer generates a protrusion in the cleaved surface, resulting in a discernible AFM contrast between the QWR and its surroundings. 30 As discussed at length in the following, the strain variations associated with the presence of N in the QWR layer, eventually counteracted by H irradiation, have a profound influence on many of the wire properties, ranging from the amount of In actually incorporated in the InGaAsN alloy 24 to the linear degree of polarization of the QWR emission.…”

Effects of hydrogen irradiation on the optical and electronic properties of site‐controlled InGaAsN V‐groove quantum wires

“…As discussed in Ref. [17], the one-dimensional nature of the QWR carrier wave function results in a strong anisotropy of the energy shift of the emission of InGaAsN Vgroove QWRs for different orientations of B (see Fig. 2), which can be effectively modeled by approximating the confinement in the QWR with an anisotropic parabolic potential [18].…”