Magneto-optical studies of iron impurity in HVPE GaN

Niedźwiadek, A.; Wysmołek, A.; Wasik, D.; Szczytko, Jacek; Kamińska, M.; Twardowski, A.; Sadowski, M. L.; Potemski, M.; Clerjaud, B.; Pastuszka, B.; Łucznik, B.; Grzegory, I.

doi:10.1016/j.physb.2007.08.211

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…17,30,31 Moreover, Ofuchi et al 22 observed the wurtzite to zinc-blend reconstruction through EXAFS analysis in their low T c samples from our theoretical framework, the appearance of a zinc-blend Fe-GaN configuration enhances the AFM interaction. Nevertheless, a satisfactory understanding of the ferromagnetic (FM) mechanism in Fe-doped GaN remains unclear, and the deep analysis of FM Fe-doped wurtzite GaN system is mandatory.…”

Section: Investigations Of Magnetism In Diluted Magnetic Semiconductomentioning

confidence: 60%

AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN

Cheng

Zhou

et al. 2014

Mod. Phys. Lett. B

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In this paper, we present a first principle investigation on Fe-doped GaN with wurtzite and zinc-blend structure using full potential density functional calculations. Data point out that the magnetic behavior of Fe-doped GaN system is strongly dependent on Fe doping configurations. In agreement with the experimental reports, and independently by doping, antiferromagnetism occurs in the zinc-blend structure, while in the wurtzite structure ferromagnetism depends on the Fe doping configurations. Detailed analyses combined with density of state calculations support the assignment that the ferromagnetism is closely related to the impurity band at the origin of the hybridization of Fe 3d and N 2p states in the Fe-doped GaN of wurtzite phase.

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Section: Investigations Of Magnetism In Diluted Magnetic Semiconductomentioning

confidence: 60%

AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN

Cheng

Zhou

et al. 2014

Mod. Phys. Lett. B

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Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Wołoś¹,

Kamińska²

2008

Semiconductors and Semimetals

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Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

Neuschl

Gödecke

Thonke

et al. 2015

Journal of Applied Physics

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Internal transitions of Fe3+ ions in wurtzite gallium nitride were analyzed by means of photoluminescence, Zeeman, and transmission spectroscopy in order to investigate the fine structure. Magnetic fields up to 14 T were applied perpendicular or parallel to the crystal c-axis, causing a characteristic splitting pattern of the luminescence related to the transition from the 4T1 excited state to the 6A1 ground state of Fe3+. The complete Hamiltonian matrix is constructed taking into account the crystal field in cubic and trigonal symmetry, spin-orbit interaction, and the influence of external magnetic fields. Numerical solution yields the exact energy level scheme of the excited state 4G of Fe3+ ions in GaN, which partly revises assumptions based on a qualitative treatment considering group theory only and invoking the influence of a Jahn-Teller effect. The coincidence of the calculated energy levels with the experimental data verifies the derived fine structure of the 3d metal ion.

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Magneto-optical studies of iron impurity in HVPE GaN

Cited by 3 publications

References 5 publications

AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN

AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN

Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

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