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We report on magneto-optical studies on iron doped GaN crystals grown using hydride vapor phase epitaxy method on bulk GaN substrate. The investigated samples showed an intensive 1.3 eV luminescence band, characteristic of FeA high quality of the investigated samples allowed us to observe a well-resolved fine structure of intracenter transitions between 4 T 1 (G) and 6 A 1 (S) states, consisting of four sharp no-phonon lines. All the observed no-phonon lines showed pronounced splittings in magnetic field. From the analysis of the magneto-optical data, the structure of split 4 T1(G) multiplet in the magnetic field applied along c-axis of GaN crystals was established.