Magneto-transport property of an AlInN/AlN/GaN heterostructure

Xie, Xinjian; Gao, Kuang-Hong; Li, S.; Zhou, Ding Bang; Zhou, Wei; Sun, Yan; Lin, Tianquan

doi:10.1016/j.physb.2019.03.030

Cited by 5 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This indicates that the observed positive MR cannot be attributed to the Lorentz deflection. Unwanted parallel conduction could lead to a positive MR [24,25]. But we have found that the possible parallel conductions arising from ZnO and/or Zn 1−x Mg x O layers have negligible contributions to the electrical transport [11].…”

Section: Resultsmentioning

confidence: 99%

Low-temperature positive magnetoresistance in ZnO-based heterostructures

Rong¹,

Zhang²,

Gao³

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The positive magnetoresistance (MR) usually appears at cryogenic temperature in ZnO-based transport systems, the origin of which is reported to be related to the localized magnetic moment. Here we find a different origin of the positive MR in Zn1−x Mg x O/ZnO heterostructures prepared by magnetron sputtering. The large positive MR is observed in all samples at 2 K. On increasing temperature, the observed positive MR is gradually suppressed and transformed into the negative MR at higher temperature. Similarly, the suppression of the positive MR also occurs in the samples with the higher electron density. The experimental data can be well described by applying a two-band model combined with the weak localization (WL) theory. This indicates that the observed positive MR originates from the impurity-band-related two-band transport, while the observed negative MR arises from the WL.

show abstract

Section: Resultsmentioning

confidence: 99%

Low-temperature positive magnetoresistance in ZnO-based heterostructures

Rong¹,

Zhang²,

Gao³

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…A sheet resistance (Rs) value as low as 128 Ω/sq has been reported, with a 2DEG density of 3.21×10 13 /cm 2 [10]. Besides, the alloy scattering can be avoided in the AlN system, which enhances the 2DEG hall mobility [11,12]. AlN barrier based HEMT devices, with low gate leakage and high I on /I off ratio, has been demonstrated [13].…”

Section: Introductionmentioning

confidence: 99%

Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Xia¹,

Zhu

Liu³

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN x cap is able to maintain the two dimensional electron gas (2DEG) stability in a long period. An AlN/GaN heterostructure with a 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. The carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm 2 /Vs.

show abstract

Zero-field spin splitting in AlInN/GaN heterostructures

Gao

Zhang

et al. 2020

Physica B: Condensed Matter

View full text Add to dashboard Cite

Magneto-transport property of an AlInN/AlN/GaN heterostructure

Cited by 5 publications

References 16 publications

Low-temperature positive magnetoresistance in ZnO-based heterostructures

Low-temperature positive magnetoresistance in ZnO-based heterostructures

Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Zero-field spin splitting in AlInN/GaN heterostructures

Contact Info

Product

Resources

About