Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Xu, Zhiyu; Gong, Wenyu; Lin, Aiming; Zhang, Yan; Wang, Licheng

doi:10.2991/icsmme-15.2015.28

Cited by 2 publications

(1 citation statement)

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“…These domains are anti-ferromagnetically ordered up to 200 Oe. The Arrot plot (Figure b (right inset)) provides the evidence of non saturating AFM in an SAF layer for a low field. − These [Co/Pt] 4 and SAF get coupled with Co 20 Fe 60 B 20 , resulting in the pinning of the RL.…”

Section: Resultsmentioning

confidence: 99%

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Moinuddin

Lone

Srinivasan

et al. 2019

ACS Appl. Electron. Mater.

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This study reports the current-induced switching of a Co20Fe60B20/MgO/Co20Fe60B20-based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt]4 stack as a synthetic anti-ferromagnetic (SAF) layer. Electrical and spectroscopic evidence of p-MTJs reveals that the pinning of the Co20Fe60B20 layer by the SAF through a Ta spacer layer enhances the switching resistance after annealing at 650 K (375 °C). A drastic improvement of 6 times in the tunneling magnetoresistance (TMR) was observed after annealing in an external magnetic field (14% for as-deposited and 83% for annealed both for zero bias). The TMR also shows a gradual increased behavior with bias at room temperature, which may be attributed to the multi-domain switching with increase in current. The analogous SAF-based MTJ devices were modeled using the non-equilibrium Green’s function (NEGF) to validate the experimental results. The existence of a stable TMR and the low switching current density of the fabricated p-MTJ structures provides higher reliability and low-power operation. This makes it attractive for next-generation MTJ applications, especially for embedded memory, system-on-chip, IoT, and neuromorphic computing applications.

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Section: Resultsmentioning

confidence: 99%

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Moinuddin

Lone

Srinivasan

et al. 2019

ACS Appl. Electron. Mater.

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Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

Ryu

Nam

2020

Appl. Phys. A

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Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Abstract: Abstract-Magnetic properties and magnetocaloric effects (MCE) of the tetragonal (ThCr

Cited by 2 publications

References 20 publications

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

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Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Abstract: Abstract-Magnetic properties and magnetocaloric effects (MCE) of the tetragonal (ThCr

Cited by 2 publications

References 20 publications

Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

Contact Info

Product

Resources

About

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application