Magnetoluminescence in quantum dots and quantum wires of II–VI diluted magnetic semiconductors

Takahashi, Nobuhiro; Takabayashi, Kazumasa; Souma, I.; Shen, Jingjie; Oka, Y.

doi:10.1063/1.373425

Cited by 38 publications

(22 citation statements)

References 9 publications

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“…However, the ionization energy and spin polaronic shift have been investigated in quantum well structure [20,[31][32][33][34][35][36] and Exciton magnetic polarons in DMS-QDs have been investigated experimentally [37,38]. We suggest spinflip Raman scattering as an experimental tool to verify our results.…”

Section: Resultssupporting

confidence: 67%

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Binding energy of impurity states in a parabolic quantum dot in a strong magnetic field

Peter

Gnanasekar

Navaneethakrishnan

2005

Physica Status Solidi (b)

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The binding energies of shallow hydrogenic impurities in parabolic quantum dots are calculated using a variational approach within the effective mass approximation. Results are obtained for Cd 1-x in Mn x in Te/Cd 1-x out Mn x out Te structures as a function of the dot radius in an external magnetic field. The results show that the impurity binding energy (i) increases with the decrease in dot radius, (ii) decreases when the magnetic field is increased for a given dot and (iii) increases to a maximum value at 90 Å and then decreases as the size of the dot increases beyond 90 Å in the finite barrier case. This feature is different from non magnetic quantum well structures. Spin polaronic shifts are estimated using a mean field theory. The results show that the shifts are ≤1 meV in the zero-field case and still smaller in a magnetic field. This shift not only decreases in a magnetic field but also decreases when the dot radius increases.

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Section: Resultssupporting

confidence: 67%

“…Such a QD may be fabricated by the method of evolution of self-assembled quantum dots (QDs) in the Stransky-Krastanow mode as in the case of Cd 1-x Mn x Se QDs or by electron beam lithography and wet chemical etching which is used to fabricate quantum wires [20].…”

Section: Ionization Energymentioning

confidence: 99%

Binding energy of impurity states in a parabolic quantum dot in a strong magnetic field

Peter

Gnanasekar

Navaneethakrishnan

2005

Physica Status Solidi (b)

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“…Recently, semiconductor metal transition in a QWW system has also been predicted [8]. Quantum Wells (QWs) and Quantum Dots (QDs) of Cd 1-x Mn x Se diluted magnetic semiconductors have recently been fabricated and magneto luminescence studies have been carried out [9]. Electron phonon interaction leading to the formation of polarons is reviewed by Wendler [10] and Ridley [11].…”

Section: Introductionmentioning

confidence: 98%

Effect of dielectric screening on the binding energies and diamagnetic susceptibility of a donor in a quantum well wire

Latha¹,

Rajashabala²,

Navaneethakrishnan³

2006

Physica Status Solidi (b)

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The effect of the dielectric screening on donor binding energies in a quantum wire has been estimated. Since the screening function is shown to be significant in a few phenomena like carrier transport, and not so in a few cases like the donor binding energy calculations, five different screening functions have been used in the calculations to see their relative merits. It is observed that the dielectric function obtained by Resta using the Thomas -Fermi approximation not only gives lower estimates of the ionization energies for all well widths (L), but also is shown to vary very rapidly with L. The other functions used are those of Hermanson and Vinsome & Richardson. Using the results of the variational calculations for the finite barrier problem, the diamagnetic susceptibility of a donor as a function of L has also been estimated. Though experimental results are not available, we have compared our results for E ion with other theoretical estimates available in the literature. The agreement is found to be good.

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“…However, few reports attempt to investigate the fabrication process for II-VI-based DMS nanostructures. [9,10] In this paper, we investigated the structural and optical properties of ZnSe-based DMS quantum-well wire (QWW) structures formed by using molecular beam epitaxy (MBE) and wet chemical etching technique to produce high-quality device-oriented nanostructures.…”

mentioning

confidence: 99%

Structural and optical properties of ZnSe‐based diluted magnetic semiconductor quantum‐well wire arrays by wet chemical etching

Muranaka

Iizuka

Hishikawa

et al. 2010

Phys. Status Solidi (c)

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The ZnSe‐based mesa structures with well‐defined and smooth facets were successfully demonstrated by using molecular beam epitaxy (MBE) and wet chemical etching. The ZnSe structures were found to be bound by (111) and (‐1‐11) facets along the [‐110] direction, and bound by (1‐11) and (‐111) facets along the [110] direction, respectively. The intensities of the non‐polarized PL peaks from the [‐110]‐ and [110]‐oriented QWW structures were almost proportional to the unetched region and additional decreases were not observed. The PL peaks from the QWW structures were found to be highly polarized when the polarization angle was aligned parallel to the wire direction. The degrees of the linear polarization were 18% for the [‐110]‐oriented QWW structure and 26% for the [‐110]‐oriented QWW structure, respectively. The results of the PL and magneto‐PL measurements show no process‐induced damage to degrade magneto‐optical performance of the DMS structures by using this method. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Magnetoluminescence in quantum dots and quantum wires of II–VI diluted magnetic semiconductors

Cited by 38 publications

References 9 publications

Binding energy of impurity states in a parabolic quantum dot in a strong magnetic field

Binding energy of impurity states in a parabolic quantum dot in a strong magnetic field

Effect of dielectric screening on the binding energies and diamagnetic susceptibility of a donor in a quantum well wire

Structural and optical properties of ZnSe‐based diluted magnetic semiconductor quantum‐well wire arrays by wet chemical etching

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