Structural and optical properties of ZnSe‐based diluted magnetic semiconductor quantum‐well wire arrays by wet chemical etching

Abstract

The ZnSe‐based mesa structures with well‐defined and smooth facets were successfully demonstrated by using molecular beam epitaxy (MBE) and wet chemical etching. The ZnSe structures were found to be bound by (111) and (‐1‐11) facets along the [‐110] direction, and bound by (1‐11) and (‐111) facets along the [110] direction, respectively. The intensities of the non‐polarized PL peaks from the [‐110]‐ and [110]‐oriented QWW structures were almost proportional to the unetched region and additional decreases were not observed. The PL peaks from the QWW structures were found to be highly polarized when the polarization angle was aligned parallel to the wire direction. The degrees of the linear polarization were 18% for the [‐110]‐oriented QWW structure and 26% for the [‐110]‐oriented QWW structure, respectively. The results of the PL and magneto‐PL measurements show no process‐induced damage to degrade magneto‐optical performance of the DMS structures by using this method. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)