Magnetoresistance effects in laterally confined n-GaAs/(AlGa)As heterostructures

Taylor, R. P.; Main, P. C.; Eaves, L.; Beaumont, S. P.; McIntyre, I. A.; Thoms, S.; Wilkinson, C.D.W.

doi:10.1088/0953-8984/1/51/014

Cited by 20 publications

(6 citation statements)

References 24 publications

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“…Essentially similar results were obtained by Taylor et al 219 In the field range of these experiments, 27,55,63,167,219 the magnetoresistance is exclusively caused by the enclosed flux and the Lorentz force (so called orbital effects). The Zeeman energy does not play a role.…”

Section: Narrow-channel Experimentssupporting

confidence: 85%

Quantum Transport in Semiconductor Nanostructures

Beenakker

Houten

1991

Solid State Physics

1,114

724

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I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).Comment: 111 pages including 109 figures; this review from 1991 has retained much of its usefulness, but it was not yet available electronicall

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Section: Narrow-channel Experimentssupporting

confidence: 85%

Quantum Transport in Semiconductor Nanostructures

Beenakker

Houten

1991

Solid State Physics

1,114

724

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“…This leaves only the contribution from particle-hole diffusion, which is found to be insensitive to magnetic field while the Landau quantization remains unresolved, as a result of which the fluctuations in most metals persist to very high magnetic fields with unaltered characteristics [9]. The same cannot be said for semiconductor systems, however, in which well-defined Landau quantization is achieved at sub-tesla fields, giving rise to dramatic modification of the fluctuation characteristics [120][121][122][123][124][125][126][127]. Nonetheless, over magnetic field ranges where the Landau quantization is not yet resolved, study of the amplitude of the conductance fluctuations has been widely used as a means to determine the dephasing time.…”

Section: Spin-flip Scattering Timementioning

confidence: 99%

Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

Lin

Bird

2002

J. Phys.: Condens. Matter

369

417

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In this review, we discuss the results of recent experimental studies of the low-temperature electron dephasing time (τ φ) in metal and semiconductor mesoscopic structures. A major focus of this review is on the use of weak localization, and other quantum-interference-related phenomena, to determine the value of τ φ in systems of different dimensionality and with different levels of disorder. Significant attention is devoted to a discussion of three-dimensional metal films, in which dephasing is found to predominantly arise from the influence of electron-phonon (e-ph) scattering. Both the temperature and electron mean free path dependences of τ φ that result from this scattering mechanism are found to be sensitive to the microscopic quality and degree of disorder in the sample. The results of these studies are compared with the predictions of recent theories for the e-ph interaction. We conclude that, in spite of progress in the theory for this scattering mechanism, our understanding of the e-ph interaction remains incomplete. We also discuss the origins of decoherence in low-diffusivity metal films, close to the metal-insulator transition, in which evidence for a crossover of the inelastic scattering, from e-ph to 'critical' electron-electron (e-e) scattering, is observed. Electronelectron scattering is also found to be the dominant source of dephasing in experimental studies of semiconductor quantum wires, in which the effects of both large-and small-energy-transfer scattering must be taken into account. The latter, Nyquist, mechanism is the stronger effect at a few kelvins, and may be viewed as arising from fluctuations in the electromagnetic background, generated by the thermal motion of electrons. At higher temperatures, however, a crossover to inelastic e-e scattering typically occurs; and evidence for this large-energy-transfer process has been found at temperatures as high as 30 K. Electron-electron interactions are also thought to play an important role in dephasing in ballistic quantum dots, and the results of recent experiments in this area are reviewed. A common feature of experiments, in both dirty metals

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“…For our Sn-doped ÿlms the elastic mean free path l e reaches about d=3, so that l e is almost comparable to d and the surface boundary scattering plays an important role. This magnetoconductance (MC) enhancement is ascribable to the skipping orbit e ect probably due to the presence of specular surface scattering [6,7]. Saturation of this e ect occurs at magnetic ÿelds…”

Section: Resultsmentioning

confidence: 99%