Magnetoresistance mobility extraction in the saturation regime of short channel MOS devices

Abstract

The effect of magnetic field in the saturation regime of sub �m MOSFETs is being reported here for the first time. The study was based on bulk MOSFETs featuring a high-Klmetal gate with an equivalent oxide thickness of 2.4 nm. Channel length ranged from 1 �m down to 50 nm, while width was kept constant at 10 �m. It is found that it is possible to extract a magnetoresis tance mobility �MR even in the saturation regime of operation and in turn study the observed �MR against channel length, tem perature, drain voltage and gate voltage. For these sub-micron devices, electron transport is influenced by the high electric field that exists in the channel and velocity saturation, velocity over shoot and even quasi-ballistic effects could playa role for the shortest channel lengths Here, the observed �MR behavior is well interpreted using velocity saturation and overshoot effects.

High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs

“…V th was extracted from the Y-function method(8). V th shift as a function of WNW may be caused by backside/sidewall D it .…”

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

“…this feature means that an apparent MR mobility can be directly extracted from linear regime to saturation without any assumption on dimensions [8].…”

“…It allows an accurate mobility extraction without any need for precise information on the exact physical dimensions and surface carrier density of the devices. A first attempt has already been performed in bulk technology [8], but with no drain current modeling aspects and no consideration of carrier saturation velocity effect. In this paper, we developed a new calibrated physical compact model of drain current, which includes magnetotransport phenomenon, and allows physical interpretation of MR mobility and subsequent extraction of carrier saturation velocity.…”

Mobility Investigations on Strained 30-nm High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

“…It is clear, that the device in saturation strongly deviates from the rather homogenous and well-defined system in the linear operation regime. The question arises of how to interpret the measured MR mobility in this high-field regime [14]. Here, we outline a descriptive picture, which helps to get a better understanding.…”