Magnetoresistive Sensors

Dibbern, U.

doi:10.1002/9783527620166.ch9

Cited by 32 publications

(4 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To be consistent with the following MR technologies, an AMR sensor comprises a single-permalloy layer of which magnetic moment is free to rotate due to an external-magnetic field influence H f . The electrical resistance R is dependent on the angle between the magnetization of this free layer and its biasing current [ 29 ]. The R - H f characteristic of a simple AMR sensor is shown in Figure 2 .…”

Section: Magnetoresistance Sensorsmentioning

confidence: 99%

“…Note that each value of the resistance corresponds to two identical but opposed values of the normalized H f . This non-linearity is corrected in Figure 2 using the barber-pole geometry [ 29 ], in which, the permalloy layer is coated with an Al wire orientated 45° respect to its longitudinal axis therefore creating a biasing field capable to set a linear-like sensor output curve around zero magnetic fields. AMR technology offers a weak MR effect, usually lower than 3%.…”

Section: Magnetoresistance Sensorsmentioning

confidence: 99%

See 1 more Smart Citation

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

Arias

Muñoz

Moreno

et al. 2013

Sensors

View full text Add to dashboard Cite

Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function Z t ( jf ) is obtained considering it as the relationship between sensor output voltage and input sensing current, ( jf ) . The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), spin-valve (GMR-SV) and tunnel magnetoresistance (TMR). The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

show abstract

Section: Magnetoresistance Sensorsmentioning

confidence: 99%

Section: Magnetoresistance Sensorsmentioning

confidence: 99%

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

Arias

Muñoz

Moreno

et al. 2013

Sensors

View full text Add to dashboard Cite

show abstract

“…The discovery of giant magnetoresistance (GMR) in ferromagnetic multilayers [1] caused the development of the theory of the transport properties of magnetic multilayer structures and its various applications in the development of sense devices, in particular for use in the microelectromechanical systems (MEMS) [2]. The main actual problems of sense devices based on magnetoresistive structures are the sensitivity increase, thermal stability and miniaturization [3,4].…”

Section: Introductionmentioning

confidence: 99%

Technological Features Influence on Magnetic Sensitivity of Ferromagnetic Structures

Беспалов

Djuzhev

Iurov

et al. 2016

SSP

View full text Add to dashboard Cite

The main urgent problems of the magnetic devices and primary conventers development based on the magnetoresistive structures are the sensitivity improvement and thermal stability. This paper discusses how to use the magnetoresistive structures based on nanoscale films of permalloy Ni (80%) Fe (20%) in the sensory systems. It is shown the variation of the shape and size ratio of magnetoresistive elements influences the characteristics of the magnetization and the dynamic range of the sensors, as well as maximum magnetic field sensitivity. The optimization of magnetoresistive structures topological sizes was carried out and sensor design with the highest sensitivity was chosen. It is shown that sensitivity of sensors can achieve value of 20.7 (mV/V)/(kA/m) by changing bias field. The ability to function in a large temperature range with coefficient of thermal stability - 0.35 %/°С was demonstrated for the obtained magnetoresistive structures.

show abstract

“…Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Various sensor designs and electronic evaluation circuits have been developed to overcome temperature dependence, offset, and hysteresis [1,2].…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Morón¹,

García²,

Tremps³

et al. 2013

KEM

View full text Add to dashboard Cite

Abstract. Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni 80 Fe 20 /Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

show abstract

Magnetoresistive Sensors

Cited by 32 publications

References 65 publications

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

Technological Features Influence on Magnetic Sensitivity of Ferromagnetic Structures

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Contact Info

Product

Resources

About