Magnetostriction in FeTaN thin films

Cates, J.C.; Alexander, Chester; Haftek, E.; Barnard, J. A.

doi:10.1109/20.280885

Search citation statements

Order By: Relevance

Paper Sections

Select...

Anisotropy1

Film Preparation1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1994

2008

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 14 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…And the stress changes, taking a minimum value at N2 partial pressure of 10 %. These results are due to the a-Fe lattice spacing expansion caused by the nitrogen atoms intrusion [3], and the lattice spacing of the film at N2 partial pressure of 10 % is almost equal to that of bulk Fe.…”

Section: Anisotropymentioning

confidence: 91%

See 1 more Smart Citation

Readback Performance of Single-pole Head with Fe-Si-N Main-pole

1994

View full text Add to dashboard Cite

In Fe-SiN films, the nitrogen content and the double-layered construction improve the soft-magnetic properties and the domain structures. The readback output of the Fe-SiN single-pole head increases and the head noise is induced with increasing the nitrogen content. On the other hand, the Fe-Si-N/SiOz double-layered head shows extreme output deterioration. These phenomena are related to the stress anisotropy.

show abstract

Section: Anisotropymentioning

confidence: 91%

“…After the background pressure was lower than 4XI0-7 Torr, argon and nitrogen mixed gas was introduced as reactive sputtering gas for Fe-Si-N film preparation. The typical total gas pressure was set at 8XI0- 3 Torr as the internal stress and the coercivity became small.…”

Section: Film Preparationmentioning

confidence: 99%