Magnetotransport in nanocrystalline SmB6 thin films

Yong, Jie; Jiang, Yeping; Zhang, Xiaohang; Shin, Jongmoon; Takeuchi, Ichiro; Greene, R. L.

doi:10.1063/1.4927398

Cited by 14 publications

(12 citation statements)

References 44 publications

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“…We have previously demonstrated successful fabrication of SmB 6 thin films using a cosputtering method [37]. The electronic transport properties of the SmB 6 thin films were found to be consistent with those of single crystalline SmB 6 , and they support the topological Kondo insulator picture of SmB 6 [36,37].…”

Section: Introductionmentioning

confidence: 57%

Observation of the Superconducting Proximity Effect in the Surface State ofSmB6Thin Films

et al. 2016

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The proximity effect at the interface between a topological insulator and a superconductor is predicted to give rise to chiral topological superconductivity and Majorana fermion excitations. In most topological insulators studied to date, however, the conducting bulk states have overwhelmed the transport properties and precluded the investigation of the interplay of the topological surface state and Cooper pairs. Here, we demonstrate the superconducting proximity effect in the surface state of SmB 6 thin films which display bulk insulation at low temperatures. The Fermi velocity in the surface state deduced from the proximity effect is found to be as large as 10 5 m=s, in good agreement with the value obtained from a separate transport measurement. We show that high transparency between the topological insulator and a superconductor is crucial for the proximity effect. The finding here opens the door to investigation of exotic quantum phenomena using all-thin-film multilayers with high-transparency interfaces.

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Section: Introductionmentioning

confidence: 57%

Observation of the Superconducting Proximity Effect in the Surface State ofSmB6Thin Films

et al. 2016

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“…Above T * , in regime II, R H decreases with increasing temperature and has its maximum at 3.5 K in agreement with Refs. [10,[34][35][36]. The spread of values of the crossover temperature T * reported in the literature might be due to variation in sample quality.…”

Section: Resultsmentioning

confidence: 99%

Bulk and in-gap states in SmB6 revealed by high-field magnetotransport

Shahrokhvand¹,

Pezzini²,

Delft³

et al. 2017

Phys. Rev. B

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We report on temperature-dependent magnetotransport experiments of SmB 6 single crystals in high magnetic fields up to 33 T. Above the low-temperature plateau region in the zero-field resistivity, we find two distinct gapped regimes. The first is characterized by a temperature-independent gap 2 that closes in the presence of a high magnetic field while the second regime, above ∼8 K, features an energy gap 1 that is temperature dependent. In the entire temperature range, we observe an overall negative magnetoresistance that does not depend on the orientation of the crystalline plane with respect to the applied magnetic field with a maximum value at T ∼ 6.2 K. The regime of in-gap states is characterized by a low mobility, an anomalously high carrier concentration, and an enhanced nonlocal resistance that exceeds the expected classical value for a two-dimensional metallic conductor. Overall, our data can be interpreted in terms of a transition from bulk to in-gap dominated transport, but evidence of topological surface states is not observed.

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“…Heavy fermion semiconductor samarium hexaboride, SmB 6 , attracts attention of researchers for more than half a century. Its fascinating physical properties are very interesting not only because of long-lasting fundamental questions, but also from application point of view [1][2][3][4][5][6][7][8][9][10]. Electrical resistivity of high-quality SmB 6 samples shows a rapid increase with decreasing temperature below 50 K, and surprisingly, it shows tendency to saturate at very high residual value ρ 0 at the lowest temperatures, below ≈ 4 K [2,9,10], while the corresponding residual conductivity σ 0 = 1/ ρ 0 is less than the minimum metallic conductivity σ min defined by Mott [11].…”

Section: Introductionmentioning

confidence: 99%

Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

Baťková¹,

Baťko²,

Gabáni³

et al. 2018

Physica B: Condensed Matter

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We studied electrical resistance of a single-crystalline SmB 6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp[-(T 0 /T ) 1/3 ]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB 6 .

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Magnetotransport in nanocrystalline SmB6 thin films

Cited by 14 publications

References 44 publications

Observation of the Superconducting Proximity Effect in the Surface State ofSmB6Thin Films

Observation of the Superconducting Proximity Effect in the Surface State ofSmB6Thin Films

Bulk and in-gap states in SmB6 revealed by high-field magnetotransport

Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

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