Magnetotransport properties of InSb-MnSb nanostructured films

Kochura, A. V.; Маренкин, С. Ф.; Novodvorsky, O. A.; Mikhalevsky, V. A.; Davidov, Alexander; Shakhov, M. A.; Lähderanta, E.; Захвалинский, В. С.; Kuzmenko, A. P.

doi:10.1051/epjconf/201818506003

Cited by 3 publications

(2 citation statements)

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“…Theoretical and experimental studies have been carried out to describe the magnetic phenomenon and the half-metallicity comportment. Mn-doped InSb was studied by Novotortsev et al [35], (Fe, Mn, and Cr) doped InSb [36][37][38][39][40][41][42][43]. The aim of our study is to predict structural, electronic, and magnetic properties of Ti-doped InSb.…”

Section: Introductionmentioning

confidence: 96%

DFT based investigation of the structural, magnetic, electronic, and half-metallic properties of solid In1-xTixSb solutions

Amrani¹,

Berber²,

Mebrek³

2021

Condens. Matter Phys.

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With the intention to reveal the effect of the substitution, Ti-doped InSb alloy, we accomplished a first-principles prediction within the FPLAPW+lo method. We used GGA-PBEsol scheme attached with the improved TB-mBJ approach to predict structural, electronic, and magnetic properties of In1-xTixSb with concentration x=0, 0.125, 0.25, 0.50, 0.75, 0.875, and 1. Our lattice parameters are found in favorable agreement with the available theoretical and experimental data. The calculation shows that all structures are energetically stable. The substitutional doping transforms the ionic character of the InSb compound in half-metallic ferromagnetic comportment for concentration x = 0, 0.125, 0.25, and 0.50, with a spin polarization of 100% at the Fermi level, and metallic nature for In0.25Ti0.75Sb and In0.125Ti0.875Sb. The total magnetic moments are also estimated at about 1 mu;B. In0.875Ti0.125Sb, In0.75Ti0.25Sb, and In0.50Ti0.50Sb have half-metallic ferromagnets comportment and they can be upcoming applicants for spintronics applications.

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Section: Introductionmentioning

confidence: 96%

DFT based investigation of the structural, magnetic, electronic, and half-metallic properties of solid In1-xTixSb solutions

Amrani¹,

Berber²,

Mebrek³

2021

Condens. Matter Phys.

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“…Обнаружена анизотропия физических свойств и выявлены особенности механизмов электронных и фононных процессов, определена роль включений, а также межфазных слоев вокруг них в транспортные свойства. Имеется много публикаций, посвященных синтезу и изучению магнитных свойств этих эвтектик [6][7][8][9][10][11]. Однако динамические характеристики недостаточно исследованы.…”

Section: Introductionunclassified

Комбинационное рассеяние света в эвтектическом композите InSb-MnSb

Мамедов¹,

Араслы²,

Рагимов³

et al. 2020

Физика И Техника Полупроводников

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Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.

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