Mainstream rapid thermal processing for source–drain engineering from first applications to latest results

Niess, J.; Paul, S.; Buschbaum, S.; Schmid, P.; Lerch, W.

doi:10.1016/j.mseb.2004.07.036

Cited by 8 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ray tracing is performed to simulate the radiative heat exchange given by equation (5). The balance of radiative fluxes is determined for all the control volumes until the global equilibrium of heat fluxes is reached, in other words, when the residue is reduced by four orders of magnitude of the initial value or more.…”

Section: Numerical Simulationsmentioning

confidence: 99%

“…In the 1980s, the use of conventional furnaces started becoming a hindrance to the miniaturization of components due to their excessive inertia. Hence rapid thermal processes for which heating is provided by tungsten halogen infrared lamps and where the reactor wall is reflective and maintained at low temperature emerged to ensure precise heat treatments in the range of seconds or minutes [4,5]. The stringent requirement of less than 1 C variation across the wafer (silicon substrate) enables to guarantee quality and long-term stability of the devices [6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

View full text Add to dashboard Cite

Rapid thermal processes are used in various key stages in the microelectronics industry. In this study, the heat transfer in a rapid thermal system is modelled with the finite volume method. The influence of the radiative properties of the quartz window on the thermal profile of the silicon wafer is first investigated. The obtained temperatures are interpreted by analyzing the radiative properties according to wavelength and temperature. The wafer temperature profile for a non-optimized heating in steady-state is explained by a four-phase scheme where the radiative heat fluxes are depicted. From this scheme, a filter on the underside of the quartz window is envisaged to achieve temperature uniformity for the wafer. Two configurations are tested, one where the filter covers the entire lower surface of the quartz window and another where it is placed in a ring close to the reactor wall to confine the infrared radiations with wavelengths beyond 2.6 mm in order to raise the temperature at the edge of the wafer. Simulations demonstrate that the latter modification enables a more significant improvement of the wafer temperature homogeneity with less than 1% dispersion. The implementation of the filtering window is also discussed.

show abstract

Section: Numerical Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

View full text Add to dashboard Cite

show abstract

“…The source term values can be previously calculated with the lamp model before simulating the system. Moreover, different power applied instructions can be entered according to the processes [6,31]. The wafer temperature evolution can be related to the one of the lamps in order to optimise the thermal budget received by the wafer.…”

Section: Bulb (Quartz)mentioning

confidence: 99%

“…1a). Process times vary from a few seconds for implant annealing up to a few minutes for high-K annealing or curing [6]. The main technological challenge is to obtain a well controlled uniform temperature at the wafer surface.…”

Section: Introductionmentioning

confidence: 99%

Modelling of an infrared halogen lamp in a rapid thermal system

Logerais

Bouteville

2010

International Journal of Thermal Sciences

View full text Add to dashboard Cite

“…Rapid thermal processing (RTP) technology has been widely used in the semiconductor industry for decades [1]. One of the major RTP applications is metal silicidation.…”

Section: Introductionmentioning

confidence: 99%

Cost effective and robust nickel silicidation process qualification and chamber matching in rapid thermal processing tools

Tong

Suresh

Tan

et al. 2011

2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

A new technique in qualification of low temperature nickel silicide process is studied. Bare silicon wafers are first oxidized to form a thick film of thermal oxide, followed by nickel and titanium film stack deposition. The samples are then annealed at low temperature using a rapid thermal processing tool. It is shown that the nickel and titanium film stack forms an alloy above the thermal oxide layer. This alloy's sheet resistance depends on the nickel/titanium film thickness, nickel to titanium thickness ratio, annealing temperature and time. Using the high temperature sensitivity compared to that in conventional technique, this new technique offers an accurate, reliable, and cost effective approach for process qualification, rapid thermal annealing chamber matching and daily monitoring.. Keywords-nickel silicide; low temperature; nickel and titanium film stack; process qualification; chamber matching Figure 1 Schematic flow chart for the conventional approach

show abstract

Mainstream rapid thermal processing for source–drain engineering from first applications to latest results

Cited by 8 publications

References 12 publications

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Modelling of an infrared halogen lamp in a rapid thermal system

Cost effective and robust nickel silicidation process qualification and chamber matching in rapid thermal processing tools

Contact Info

Product

Resources

About