Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors

Yu, Woo Jong; Kang, Bo Ram; Lee, Il Ha; Min, Yo‐Sep; Lee, Young Hee

doi:10.1002/adma.200900911

Cited by 39 publications

(31 citation statements)

References 31 publications

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“…To overcome this, a floating gate was introduced to achieve a non-volatile memory device. [114] The device consists of a stack of tunneling oxide, a floating gate, a blocking oxide, and a control gate above the channel (Figure 18). The tunneling oxide, between the floating gate and the channel, has a thickness of 5 nm.…”

Section: Electrostatic Non-volatile Doping Using Trap Layersmentioning

confidence: 99%

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Strategy for Carrier Control in Carbon Nanotube Transistors

Lee

2011

ChemSusChem

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Carbon nanotubes exhibit remarkable mechanical and electronic properties and are, therefore, being regarded as a new functional material for next generation electronics. Nevertheless, several obstacles still exist for an application in industry. The control of carriers in carbon nanotubes is of critical importance prior to an industrial application in transistors. As carbon nanotubes exhibit p-type behavior under ambient conditions, it is difficult to convert them from a p- to an n-type transistor. Also, doping control is a critical issue for applying traditional CMOS technology. Here, we discuss various approaches for preparing operating carbon nanotube transistors: i) impurity doping that employs conventional and interstitial insertion of group III or V materials, ii) chemical doping that induces charge transfer between chemicals and CNTs, iii) carrier control that utilizes the work function difference between metal and CNTs, iv) electrostatic doping that controls the carrier type by using a gate bias, and v) ambipolarity that does not use chemical doping. Advantages and drawbacks of these approaches will be discussed extensively in the text.

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Section: Electrostatic Non-volatile Doping Using Trap Layersmentioning

confidence: 99%

“…[114] The floating gate, used in a non-volatile memory device, could replace the volatile silicon back gate in a dual gate structure. A charge trap layer in a top-floating gate was used to determine the majority carrier type of the CNT channel.…”

Section: Electrostatic Non-volatile Doping Using Trap Layersmentioning

confidence: 99%

Strategy for Carrier Control in Carbon Nanotube Transistors

Lee

2011

ChemSusChem

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“…Several research groups have focused on the multilevel operation of CNT-FET memory devices, [15][16][17] because the multilevel data storage capability can increase the memory density per unit cell. In these studies, multilevel storage states were achieved by introducing a floating gate in the top-gate FET configuration, or using the intrinsic hysteresis effect originating from the polarization of molecules in a global back-gate FET configuration.…”

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confidence: 99%

Demonstration of nonvolatile multilevel memory in ambipolar carbon nanotube thin-film transistors

Li¹,

Li²,

Jin³

et al. 2015

Appl. Phys. Express

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Multilevel memories have attracted significant interest because of their larger memory density per unit cell. Here, we investigated multilevel operation with ambipolar carbon nanotube thin-film transistors. Three distinct conduction states and a direct change between any of them were demonstrated by selecting appropriate values for the magnitude and duration of each program/erase voltage pulse. A low operation voltage of 5 V and a short duration of 1 s were obtained by utilizing a bilayer Al 2 O 3 -epoxy dielectric to enhance the gate modulation efficiency. A tradeoff exists between low-voltage operation and fast switching for a given device.

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“…25) Other routes to doping control make use of electrostatics and examples include multiple gate structures, 26) or even better, floating gates. 27) At this point, we note that SWNTs can also be used to improve the properties of organic semiconductor 28) as well as conducting polymer 29) materials. Finally, we also note that thin films of randomly organized SWNTs have been thoroughly studied over the past few years for the replacement of indium tin oxide or other oxide-based transparent conductor films (TCFs) in display or solar cell applications.…”

Section: Tfts Based On Carbon Nanotubesmentioning

confidence: 97%

Carbon Nanotubes, Semiconductor Nanowires and Graphene for Thin Film Transistor and Circuit Applications

Pribat¹,

Cojocaru

2011

Jpn. J. Appl. Phys.

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In this paper, we briefly review the use of carbon nanotubes and semiconductor nanowires, which represent a new class of nanomaterials actively studied for thin film transistors and electronics applications. Although these nanomaterials are usually synthesised at moderate to high temperatures, they can be transferred to any kind of substrate after growth, paving the way for the fabrication of flexible displays and large area electronics systems on plastic. Over the past few years, the field has progressed well beyond the realisation of elementary devices, since active matrix displays driven by nanowire thin film transistors have been demonstrated, as well as the fabrication of medium scale integrated circuits based on random arrays of carbon nanotubes. Also, graphene, a new nanomaterial has appeared in the landscape; although it is a zero gap semiconductor, it can still be used to make transistors, provided narrow ribbons or bilayers are used. Graphene is also a serious contender for the replacement of oxide-based transparent conducting films. #

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Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors

Cited by 39 publications

References 31 publications

Strategy for Carrier Control in Carbon Nanotube Transistors

Strategy for Carrier Control in Carbon Nanotube Transistors

Demonstration of nonvolatile multilevel memory in ambipolar carbon nanotube thin-film transistors

Carbon Nanotubes, Semiconductor Nanowires and Graphene for Thin Film Transistor and Circuit Applications

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