2019
DOI: 10.1063/1.5084272
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Manganese ion implanted ultrananocrystalline diamond films: Optical and electrical characterization

Abstract: We report the optical and electrical properties of high-dose (1015–1017 ions/cm2) Mn-ion implanted ultrananocrystalline diamond (Mn-UNCD) films. Mn-ion implantation and post-annealing of UNCD films lead to the formation of Mn-related color centers, characterized in Mn-UNCD films by their zero phonon line emissions at 621.2 nm and phonon sidebands at 611.2 nm and 630.3 nm. Raman spectra of Mn-UNCD films indicated amorphization via high-dose Mn-ion implantation and that the annealing process results in graphitiz… Show more

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Cited by 7 publications
(14 citation statements)
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“…It is worth pointing out that the J e values of samples A-900 and A-1000 are ∼18 and 8 times higher than that of the unannealed sample, with dramatically decreasing E 0 values. Moreover, these values go beyond the EFE current density of 850 μA/cm 2 at 13.8 V/μm obtained in manganese ion-implanted UNCD films and enhanced EFE properties with an E 0 of 4.8 V/μm and a J e of 3600 μA/cm 2 at 4.9 V/μm for copper-doped UNCD films . However, with the further increasing annealing temperature, there is no EFE current observed in samples A-1100 and A-1200, which means that the turn-on field is much higher.…”
Section: Resultsmentioning
confidence: 79%
See 1 more Smart Citation
“…It is worth pointing out that the J e values of samples A-900 and A-1000 are ∼18 and 8 times higher than that of the unannealed sample, with dramatically decreasing E 0 values. Moreover, these values go beyond the EFE current density of 850 μA/cm 2 at 13.8 V/μm obtained in manganese ion-implanted UNCD films and enhanced EFE properties with an E 0 of 4.8 V/μm and a J e of 3600 μA/cm 2 at 4.9 V/μm for copper-doped UNCD films . However, with the further increasing annealing temperature, there is no EFE current observed in samples A-1100 and A-1200, which means that the turn-on field is much higher.…”
Section: Resultsmentioning
confidence: 79%
“…Moreover, the results also show that the emission characteristics of UNCD samples are uniform, while emission uniformity plays a key role in the observed increase of the collected current and additional studies are in order. Metal ions such as Cu, Au, Mn, Li, and Pt were implanted into UNCD films to enhance the EFE performance, revealing that the presence of conductive metal nanoparticles and nanographitic phases in GBs prefers to improve the electron transport. The dopants such as nitrogen and oxygen , have also been reported to introduce into UNCD films, which provide electrons for EFE in diamond grains.…”
Section: Introductionmentioning
confidence: 99%
“…The bombardment of metal Mn ions with a high-dose causes lethal damage only on the surface of the ND layer, which causes the trimming of ND facets and results in a smooth surface. 64 The SEM-EDAS image of Mn ion-implanted NDs shown as the inset of Figure 1b illustrates the presence of Mn ions (green color) with wt % = 0.65 and Mn ions distributed uniformly throughout the NDs matrix. It has to be noted that Mn ion implantation could not assure successful Mn doping to every ND placed on the Si wafer.…”
Section: Resultsmentioning
confidence: 97%
“…SEM images of Mn ion-implanted NDs shown in Figure b depicted the ND grain coalescence and resulted in a smooth surface by high-dose Mn ion implantation. The bombardment of metal Mn ions with a high-dose causes lethal damage only on the surface of the ND layer, which causes the trimming of ND facets and results in a smooth surface . The SEM-EDAS image of Mn ion-implanted NDs shown as the inset of Figure b illustrates the presence of Mn ions (green color) with wt % = 0.65 and Mn ions distributed uniformly throughout the NDs matrix.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation