Manganese-oxygen impurities in GaAs

A survey of the recent progress on the properties of transition-metal impurities in the most common III-V compounds GaAs, InP and GaP is presented. A summary of experimental techniques available for identifying deep centers and/or locating deep levels in the band gap is given. The author concentrates on 3d isolated impurities, giving the known energy levels of Fe-group substitutional impurities in the three compounds. Complexes involving these impurities are also considered. In addition, 4d, 5d and rare earth impurities are briefly discussed.

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Transition-metal impurities in III-V compounds

Clerjaud¹

1985

J. Phys. C: Solid State Phys.

255

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Ligand ENDOR on substitutional manganese in GaAs

et al. 1994

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Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance

Weiers

2006

Phys. Rev. B

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Manganese-oxygen impurities in GaAs

Cited by 5 publications

References 13 publications

Transition-metal impurities in III-V compounds

Transition-metal impurities in III-V compounds

Ligand ENDOR on substitutional manganese in GaAs

Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance

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