2008
DOI: 10.1103/physrevb.77.115309
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Manifestation of spin-orbit interaction in tunneling between two-dimensional electron layers

Abstract: An influence of spin-orbit interaction on the tunneling between two two-dimensional electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltage range. The dependence of the conductance on voltage turns out to be very sensitive to the relation bet… Show more

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Cited by 10 publications
(10 citation statements)
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“…Among systems with locally broken inversion symmetry, we consider a symmetric double-quantum-well structure (DQWS) [16,[19][20][21][22][23][24][25][26][27][28] (illustrated in Fig. 1) in which electronic states can be controlled by changing the composition and the width of the well and barrier layers and by varying the potential with use of the applied electric field and the doping.…”
Section: Introductionmentioning
confidence: 99%
“…Among systems with locally broken inversion symmetry, we consider a symmetric double-quantum-well structure (DQWS) [16,[19][20][21][22][23][24][25][26][27][28] (illustrated in Fig. 1) in which electronic states can be controlled by changing the composition and the width of the well and barrier layers and by varying the potential with use of the applied electric field and the doping.…”
Section: Introductionmentioning
confidence: 99%
“…Introducing SOI of Dresselhaus type (the same in both layers) results in a more complex spin structure of the eigenstates in the layers and more rich tunneling pattern as a result of interference between the two SOI contributions. In our previous works we considered electron tunneling between two n-type 2D layers (n-n tunneling) with account for both Rashba and Dreseelhaus contributions and obtained analytical expression for the tunnel-ing current in this general case 6,7 . However, the question why the SOI effects had not been seen in the tunneling experiments remained open.…”
Section: Introductionmentioning
confidence: 99%
“…Calculation of the current using (22) and taking the derivative with respect to V yields the differential magnetotunneling conductance G(V ) shown in Fig. 4.…”
Section: Magneto-tunneling At Finite Biasmentioning
confidence: 99%
“…18,19 In these systems, the requirement of simultaneous energy and momentum conservation for tunneling through an extended barrier leads to resonances in the tunneling conductance as the applied bias and the magnetic field parallel to the barrier are varied. 20 For charge carriers subject to spin-orbit coupling, magneto-tunneling transport has been proposed as a means to measure the spin splitting 21,22 and to generate spin-polarized currents.…”
Section: Introductionmentioning
confidence: 99%