We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific examples are single and bilayer graphene as well as singlelayer molybdenum disulphide. Resonant behavior of the differential tunneling conductance exhibited as a function of an in-plane magnetic field and bias voltage is found to be strongly affected by the (pseudo-)spin structure of the tunneling matrix. We discuss ramifications for the direct measurement of electronic properties such as Fermi surfaces and the dispersion curves. Furthermore, using a graphene double-layer structure as an example, we show how magneto-tunneling transport can be used to measure the pseudo-spin structure of tunnel matrix elements, thus enabling electronic characterization of the barrier material.