Manipulating surface states in topological insulator nanoribbons

Xiu, Faxian; He, Liang; Wang, Yong; Cheng, Liang; Chang, Li Te; Lang, Murong; Huang, Guan‐Hua; Kou, Xufeng; Zhou, Yi; Jiang, Xiaowei; Chen, Zhigang; Zou, Jin; Shailos, A.; Wang, Kang L.

doi:10.1038/nnano.2011.19

Cited by 416 publications

(520 citation statements)

References 30 publications

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“…showed small activation energy which is consistent with our observed transport properties [8]. The oscillations in resistance for sample S2 were studied at different constant error arising from surface morphology in experimental measurements of the area of nanodevices).…”

Section: Resultssupporting

confidence: 87%

“…A primary period peak in FFT spectrum (inset figure become damped and aperiodic due to high bulk electron-electron interaction and electronphonon interaction [6,8,32]. Overall, we consider these periodic quantum oscillations to be a remarkable manifestation of robust nature of TSS.…”

Section: Resultsmentioning

confidence: 79%

“…The surface states have been further probed by plotting the temperature (T) dependence of Fast Fourier transform (FFT) amplitude of dR/dB in sample S2 ( figure 3(d)). For the temperature range 2K to 20K inelastic phonon scattering is absent as indicated by a T -1/2 fit of the FFT amplitudes [8]. The phase coherence length where is the average time between inelastic events and D is the diffusion constant.…”

Section: Resultsmentioning

confidence: 99%

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Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Bhattacharyya¹,

Sharma

Awana

et al. 2017

J. Phys.: Condens. Matter

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Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi 2 Se 3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi 2 Se 3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion doping and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

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Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Bhattacharyya¹,

Sharma

Awana

et al. 2017

J. Phys.: Condens. Matter

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“…This is smaller than the theoretical predication of about 50% spin polarization for the 3D TI surface states from first-principle calculations. 21 Such deviation can be probably attributed to that the dimension of the top surface in our device (in micron scale) is much larger than the typical mean-free path and phase coherence length (tens to hundreds nanometers, see Supporting Information S10), 17,18,37 hence the carrier transport through the surface states suffers from considerable scatterings. Another possible reason could be the overestimation of the spin detection efficiency in the nonideal Co/Al 2 O 3 tunneling contact, considering that the (Bi 0.53 Sb 0.47 ) 2 Te 3 surface has a terracelike morphology.…”

mentioning

confidence: 99%

Electrical Detection of Spin-Polarized Surface States Conduction in (Bi_0.53Sb_0.47)₂Te₃ Topological Insulator

et al. 2014

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Strong spin−orbit interaction and time-reversal symmetry in topological insulators enable the spin-momentum locking for the helical surface states. To date, however, there has been little report of direct electrical spin injection/ detection in topological insulator. In this Letter, we report the electrical detection of spin-polarized surface states conduction using a Co/Al 2 O 3 ferromagnetic tunneling contact in which the compound topological insulator (Bi 0.53 Sb 0.47 ) 2 Te 3 was used to achieve low bulk carrier density. Resistance (voltage) hysteresis with the amplitude up to about 10 Ω was observed when sweeping the magnetic field to change the relative orientation between the Co electrode magnetization and the spin polarization of surface states. The two resistance states were reversible by changing the electric current direction, affirming the spin-momentum locking in the topological surface states. Angle-dependent measurement was also performed to further confirm that the abrupt change in the voltage (resistance) was associated with the magnetization switching of the Co electrode. The spin voltage amplitude was quantitatively analyzed to yield an effective spin polarization of 1.02% for the surface states conduction in (Bi 0.53 Sb 0.47 ) 2 Te 3 . Our results show a direct evidence of spin polarization in the topological surface states conduction. It might open up great opportunities to explore energy-efficient spintronic devices based on topological insulators. KEYWORDS: Topological insulator, spin polarization, surface states, spin-momentum locking, spin detection S ince the discovery of two-dimensional (2D) and threedimensional (3D) topological insulators (TIs), 1−5 they have attracted extensive research interest for their exotic physical properties that could lead to dissipationless transport in the quantum spin Hall state. 6−9 Recent studies have shown a giant spin−orbit torque in TI originating from the strong spin− orbit interaction, 10,11 which enabled the current-induced magnetization switching through spin-transfer torque with a low current density. The unique feature of 3D TI, for instance, is that it has both insulating bulk and gapless Dirac surface states. 8,9 Ternary TI compounds, such as (Bi x Sb 1−x ) 2 Te 3 , have been widely investigated for their tunability to achieve low bulk carrier density and manifest topological surface states conduction. 12,13 The presence of surface states is supported by extensive angle-resolved photoemission spectroscopy (ARPES) measurements and transport studies, 14−20 such as Shubnikov-de Haas (SdH) and Aharonov Bohm (AB) quantum oscillations. Because of the strong spin−orbital interaction in TI, direct back scatterings from nonmagnetic impurities are prohibited by the time-reversal symmetry. 8,9 More importantly, the spin-momentum locking naturally leads to a currentinduced spin polarization in surface states; 21 the surface states conduction is spin-polarized once an electric current is passed through a TI film, and this spin polarization can be...

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“…Layer-structured Bi 2 Se 3 materials may be applied for the future spintronics and quantum computing devices due to large ratio of surface-to-volume, thus it is urgent to synthesize high-quality Bi 2 Se 3 with defined sizes [2][3][4]. Various methods have been tried to fabricate Bi 2 Se 3 thin film, such as molecular beam epitaxial (MBE) [5,6], solvothermal synthesis [7], mechanical exfoliation [8], metalorganic chemical vapor deposition (MOCVD) [9] and chemical vapor deposition (CVD) [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Graphene/Bi2Se3/Graphene heterostructure without the surface oxidation of Bi2Se3

Zhang¹,

Yang²,

Liu³

et al. 2015

Front Nanosci Nanotech

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Graphene/Bi 2 Se 3 /Graphene (G/Bi 2 Se 3 /G) sandwich hybrids were fabricated via chemical vapor deposition. The medium graphene layer is used to synthesize the high-quality Bi 2 Se 3 , benefitting from the smaller lattice mismatch between graphene and Bi 2 Se 3 . The covering graphene layer is designed to inhibit the surface oxidation of Bi 2 Se 3 layers which are easily changed to BiO x in the atmosphere. The Raman spectroscopy, scanning electron microscopy and X-ray diffraction confirm the high-quality and uniform Bi 2 Se 3 film. The Raman spectroscopy and X-ray diffraction investigates antioxidant ability of the G/Bi 2 Se 3 /G structure. We conclude that the graphene can effectively improve the crystal quality of Bi 2 Se 3 and inhibit the surface oxidation of it. Graphical abstractThe method to improve the crystal quality and inhibit the surface oxidation is important for the application of the Bi 2 Se 3 films. Graphene/Bi 2 Se 3 /Graphene (G/ Bi 2 Se 3 /G) sandwich hybrids were fabricated here via chemical vapor deposition. The medium graphene layer is used to synthesize the high-quality Bi 2 Se 3 , benefitting from the smaller lattice mismatch between graphene and Bi 2 Se 3 . The covering graphene layer is designed to inhibit the surface oxidation of Bi 2 Se 3 layers which are easily changed to BiOx in the atmosphere. We conclude that the graphene can effectively improve the crystal quality of Bi 2 Se 3 and inhibit the surface oxidation of it.

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Manipulating surface states in topological insulator nanoribbons

Cited by 416 publications

References 30 publications

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Electrical Detection of Spin-Polarized Surface States Conduction in (Bi_0.53Sb_0.47)₂Te₃ Topological Insulator

Fabrication of Graphene/Bi2Se3/Graphene heterostructure without the surface oxidation of Bi2Se3

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Manipulating surface states in topological insulator nanoribbons

Cited by 416 publications

References 30 publications

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Electrical Detection of Spin-Polarized Surface States Conduction in (Bi0.53Sb0.47)2Te3 Topological Insulator

Fabrication of Graphene/Bi2Se3/Graphene heterostructure without the surface oxidation of Bi2Se3

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Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi₂Se₃)

Electrical Detection of Spin-Polarized Surface States Conduction in (Bi_0.53Sb_0.47)₂Te₃ Topological Insulator