Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond

Langer, Julia; Cimalla, V.; Lebedev, V.; Kirste, Lutz; Prescher, Mario; Luo, Tingpeng; Jeske, Jan; Ambacher, O.

doi:10.1002/pssa.202100756

Cited by 3 publications

(3 citation statements)

References 41 publications

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“…from their fluorescence intensity. However, we point out that a change in sample holder size and corresponding changes in the electric field distribution inside the reactor can influence the NV/P1 ratio [48].…”

Section: P1 and Nv Creation As Grownmentioning

confidence: 90%

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

et al. 2022

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The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV- concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over 4 orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2-20~parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin-spin coherence times T2 ranging from 45.5 to 549 μs for CVD diamonds containing 168 to 1~parts per billion NV- centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.

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Section: P1 and Nv Creation As Grownmentioning

confidence: 90%

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

et al. 2022

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“…to reduce absorption for the same P1 concentration) by optimizing the growth parameters. For that, we have further grown samples in the same reactor with varied individual growth parameters, such as oxygen or methane flow, total gas flow, pressure and holder geometry, which have been discussed in [ 41 , 42 ]. Yellow circles in figure 1 show the result of these growth protocols.…”

Section: Diamond Absorptionmentioning

confidence: 99%

Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentration

Luo¹,

Hahl²,

Langer³

et al. 2023

Phil. Trans. R. Soc. A.

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The use of diamond colour centres such as the nitrogen-vacancy (NV) centre is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser-threshold magnetometry and multi-pass geometries allow significantly improved sensitivity and performance via increased signals and strong light fields. Enabling material properties for these techniques and their further improvements are low optical material losses via optical absorption of signal light and low birefringence. Here, we study systematically the behaviour of absorption around 700 nm and birefringence with increasing nitrogen- and NV-doping, as well as their behaviour during NV creation via diamond growth, electron beam irradiation and annealing treatments. Absorption correlates with increased nitrogen doping yet substitutional nitrogen does not seem to be the direct absorber. Birefringence reduces with increasing nitrogen doping. We identify multiple crystal defect concentrations via absorption spectroscopy and their changes during the material processing steps and thus identify potential causes of absorption and birefringence as well as strategies to fabricate chemical vapour deposition diamonds with high NV density yet low absorption and low birefringence. This article is part of the Theo Murphy meeting issue ‘Diamond for quantum applications’.

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“…[17][18][19] Recently, the use of the CVD growth method to create NV centers has been studied. 10,[20][21][22][23] Because of the difficulty of controlling the incorporation of impurities during CVD, growth of n-type diamond has been limited. [24][25][26][27] In addition, n-type diamond is usually synthesized using phosphine gas, 24 which is highly toxic.…”

Section: Introductionmentioning

confidence: 99%

n-type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers

Kawase

Kawashima

Kato

et al. 2022

Journal of Applied Physics

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The longest spin coherence times for nitrogen-vacancy (NV) centers at room temperature have been achieved in phosphorus-doped n-type diamond. However, difficulty controlling impurity incorporation and the utilization of highly toxic phosphine gas in the chemical vapor deposition (CVD) technique pose problems for the growth of n-type diamond. In the present study, n-type diamond samples were synthesized by CVD using tert-butylphosphine, which is much less toxic than phosphine. The unintentional incorporation of nitrogen was found to be suppressed by incrementally increasing the gas flow rates of H2 and CH4. It was found that the spin coherence time ( T2) increased with decreasing the nitrogen concentration, which suggests that the nitrogen concentration limits the length of T2. In the sample with the lowest nitrogen concentration, T2 increased to 1.62 ± 0.10 ms. Optically detected magnetic resonance spectra indicated that all of the measured NV centers were aligned along the [111] direction. Hall measurements confirmed n-type conduction in three measured samples prepared under different growth conditions. The highest measured Hall mobility at room temperature was 422 cm2/(V s). This study provides appropriate CVD conditions for growing phosphorus-doped n-type diamond with perfectly aligned NV centers exhibiting long spin coherence times, which is important for the production of quantum diamond devices.

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Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond

Cited by 3 publications

References 41 publications

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentration

n-type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers

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