Manufacturable Monolithically Integrated InP Dual-Port Coherent Receiver for 100G PDM-QPSK Applications

Houtsma, Vincent; Weimann, Nils; Hu, Ting-Chen; Kopf, R. F.; Tate, A.; Frackoviak, J.; Reyes, Rosula; Chen, Y.K.; Zhang, L.; Doerr, C. R.; Neilson, David T.

doi:10.1364/ofc.2011.oml2

Cited by 17 publications

(14 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Signal and LO are mixed in the hybrid, resulting in a constellation rotating with its difference frequency. By plotting both the balanced photo diode currents against each other a 'perfect' circle will be obtained if there is exactly 90 o optical phase difference between the I and Q channel and there is no amplitude imbalance (see Fig 2 a) [4]. …”

Section: Coherent Link Measurement Setup and Resultsmentioning

confidence: 99%

High-power linear balanced InP photodetectors for coherent analog optical links

Houtsma¹,

Hu²,

Weimann³

et al. 2011

2011 IEEE Avionics, Fiber- Optics and Photonics Technology Conference

Self Cite

View full text Add to dashboard Cite

Section: Coherent Link Measurement Setup and Resultsmentioning

confidence: 99%

High-power linear balanced InP photodetectors for coherent analog optical links

Houtsma¹,

Hu²,

Weimann³

et al. 2011

2011 IEEE Avionics, Fiber- Optics and Photonics Technology Conference

Self Cite

View full text Add to dashboard Cite

“…In addition, they can allow the elimination of complicated alignments in the assembly process, resulting in low production costs and stabilization of module performance with mature process technologies [15], [16].…”

Section: Introductionmentioning

confidence: 99%

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers

Yagi

Yoneda

Ekawa

et al. 2017

IEICE Trans. Electron.

View full text Add to dashboard Cite

SUMMARYThis paper reports dual-polarization In-phase and Quadrature (DP-IQ) modulators and photodetectors integrated with the 90 • hybrid using InP-based monolithic integration technologies for 100/200 Gb/s coherent transmission. The DP-IQ modulator was monolithically integrated with the Mach-Zehnder modulator array consisting of deep-ridge waveguides formed through dry etching and benzocyclobutene planarization processes. This DP-IQ modulator exhibited the low half-wavelength voltage (V π = 1.5 V) and the wide 3-dB bandwidth ( f 3dB > 28 GHz). The photodetector monolithically integrated with the 90 • hybrid consisting of multimode interference structures was realized by the butt-joint regrowth. A responsivity including total loss of 7.9 dB in the waveguide was as high as 0.155 A/W at a wavelength of 1550 nm, and responsivity imbalance of the In-phase and Quadrature channels was less than ±0.5 dB over the C-band. In addition, the low dark current (less than 500 pA up to 85 • C @ −3.0 V) and the stable operation in the accelerated aging test (test condition: −5 V at 175 • C) over 5,000 h were successfully achieved for the p-i-n-photodiode array with a buried heterostructure formed through the selective embedding regrowth. Finally, a receiver responsivity including intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.070 A/W at a wavelength of 1550 nm through the integration of the spot-size converter, and demodulation of 128 Gb/s DP-QPSK and 224 Gb/s DP-16QAM modulated signals was demonstrated for the compact coherent receiver using this photodetector integrated with the 90 • hybrid. Therefore, we indicated that these InP-based monolithically integrated photonic devices are very useful for 100/200 Gb/s pluggable coherent transceivers.

show abstract

“…Consequently, they bring about low production costs and stabilization of receiver performance with mature process technologies [5,6,7,8,9]. In addition, the monolithic integration of the 90°hybrid and photodiodes using butt-joint (BJ) regrowth demonstrated high responsivity operation due to lower optical coupling loss for the BJ coupling structure with the direct connection of the core layer for waveguides from the 90°hybrid and the absorption layer for photodiodes compared with that for the evanescent coupling structure using the singlestep organometallic vapor-phase-epitaxial (OMVPE) growth process [10,11].…”

Section: Introductionmentioning

confidence: 99%

High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

Yagi

Inoue

Kikuchi

et al. 2015

IEICE Electron. Express

View full text Add to dashboard Cite

The InP-based pin-photodiode array monolithically integrated with a 90°hybrid and spot-size converters was realized using selective embedding regrowth for compact 100 Gb/s coherent receivers. The low dark current of less than 500 pA up to 85°C was attained by InP passivation effect in four-channel pin-photodiodes. As a receiver using these photodiode arrays, a receiver responsivity including total loss of 6.7 dB in the 90°hybrid and intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.060 A/W between −5°C and 85°C through the integration of the spot-size converter. Responsivity imbalance of the In-phase and Quadrature channels was also less than 0.5 dB over the C-band.

show abstract

Manufacturable Monolithically Integrated InP Dual-Port Coherent Receiver for 100G PDM-QPSK Applications

Cited by 17 publications

References 2 publications

High-power linear balanced InP photodetectors for coherent analog optical links

High-power linear balanced InP photodetectors for coherent analog optical links

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers

High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

Contact Info

Product

Resources

About