Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications

Itzler, Mark A.; Loi, K.K.; McCoy, S.; Codd, N.; Komaba, N.

doi:10.1109/leos.1999.811950

Cited by 17 publications

(6 citation statements)

References 10 publications

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“…These curves all show nonmonotonous dependence on the multiplication layer thickness, and a minimum is found at about 0.225 µm for the nominal multiplication layer thickness. This feature is qualitatively consistent with the simulation results based on traditional multiplication formula as reported by Itzler et al 33,35 and by Park et al 36 The explanation for this minimum could be referred to Fig. 2.…”

Section: Results Analyses and Discussionsupporting

confidence: 92%

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Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

2005

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InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

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Section: Results Analyses and Discussionsupporting

confidence: 92%

“…When using (4) to compute the normalized frequency response and to evaluate the -3 dB bandwidth, the total operating capacitance C is usually less than 0.3 pF 32 (about 0.20 -0.23 pF 33,34 ), and it is taken as 0.2 pF during our modeling. The average resistance including load resistance is taken as 50 Ω for our modeling.…”

Section: Modeling Detailsmentioning

confidence: 99%

Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

2005

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“…The time period between the gates was 100 µs, corresponding to a repetition rate of 10 kHz for all the measurements, to avoid the effects of afterpulsing. The Epitaxx EPM239AA has a nominal active area diameter of 40 m and some information regarding its microstructure has been published previously [21], [22]. This published material indicates that the p-well is obtained by two different zinc diffusion processes.…”

Section: Device Characteristicsmentioning

confidence: 99%

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Pellegrini

Warburton

Tan

et al. 2006

IEEE J. Quantum Electron.

135

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“…Fig. 1 shows a schematic cross section of an InP/InGaAsP/InGaAs SACM APD with a double diffused floating guard ring [22]. The adjacent graph shows the electric field profile normal to the surface and illustrates how the charge layer is used to tailor the relative fields in the multiplication and absorption layers.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Telecommunications Avalanche Photodiodes

Campbell

2007

J. Lightwave Technol.

219

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For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is frequently the photodetector of choice owing to its internal gain, which provides a sensitivity margin relative to PIN photodiodes. APDs can achieve 5-10-dB better sensitivity than PINs, provided that the multiplication noise is low and the gain-bandwidth product is sufficiently high. In the past decade, the performance of APDs for optical fiber communication systems has improved as a result of improvements in materials and the development of advanced device structures. This paper presents a brief review of APD fundamentals and describes some of the significant advances.

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Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications

Cited by 17 publications

References 10 publications

Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Recent Advances in Telecommunications Avalanche Photodiodes

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