An interdiffusivity model was established for SiGe interdiffusion under tensile or relaxed strain over the full Ge content (xGe) range (0 ≤ xGe ≤ 1), which is based on the correlations between self-diffusivity, intrinsic diffusivity, and interdiffusivity. It unifies available interdiffusivity models over the full Ge range and applies to a wider temperature range up to 1270 °C at the xGe = 0 end and to 900 °C at the high xGe = 1 end. Interdiffusion experiments under soak and spike rapid thermal annealing conditions were conducted to verify the model. Literature interdiffusion data under furnace annealing conditions were also used for the same purpose. The interdiffusivity model of this work has been implemented in major process simulation tools, and the simulation results showed good agreement with experimental data under furnace annealing and soak and spike rapid thermal annealing conditions. This work demonstrated a new approach in studying SiGe interdiffusion, which has the advantage of studying interdiffusion under non-isothermal annealing conditions.

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There has been considerable interest recently, in the formation of the source drain junctions of metal oxide semiconductor transistors using solid phase epitaxy (SPE) to activate the dopants rather than a traditional high temperature anneal. Previous studies have shown that this method results in high dopant activation as well as shallow junctions (due to the small thermal budget). In this we study the effect the temperature of SPE regrowth has on the boron activation. We find that boron activation has a monotonically increasing dependence on the temperature. Significantly, we show that by carrying out the SPE regrowth at temperatures above 1050°C, it is possible to obtain active concentrations well above the electrical solubility limits.

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