Manufacture of a nothing on insulator nano-structure with two Cr/Au nanowires separated by 18 nm air gap

Abstract

Despite the huge number of previous studies of vacuum devices, nanoscale technologies open new paradigms. Vacuum nanodevices bring multiple advantages, such as air instead of a vacuum for the nanometric gap, strong non-linear characteristics, and a metal oxide semiconductor co-integration facility. This paper presents the manufacturing process and measured characteristics of a nano-device that uses a sub-36 nm gap between two Cr/Au nano-wires. In this way, the metal nano-wires replace the semiconductor nano-islands, while an air gap stands for the ‘nothing’ region of a first-time fabricated variant for a nothing on insulator device. The electron beam lithography mask-less technology is pushed to its technical limit to define a minimum 18 nm-wide gap between two Cr/Au nanowires. The main current–voltage curves are measured for this first real device called a nothing on insulator in the variant metal–air–metal, indicating 10 nA at 10 V as the optimal variant. The main connections between the measurements and technology are emphasized.

Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET

“…The wide energy bandgap (E G ) nanocrystalline SnON nFET has the highest µ eff among single-crystal Si, InGaAs, 2D MoS 2 , and 2D WS 2 . It is noticed that the next 2 nm node commercial nanosheet nFET will use singlecrystalline Si with a T body of 7 nm, since the µ eff decreases with decreasing T body with a T body 6 dependence [55]. The µ eff of high-κ/SnON nFETs is 2.7 times higher than that of Si nFET at the same 5 nm T body , which could be used for downscaling the nanosheet T body .…”

“…The highly scaled FinFET and nanosheet FET cannot sustain the high V D that will cause the device to break down. Fortunately, the Vacuum Nano-Triode device in the Nothing-On-Insulator (NOI) configuration may overcome this challenge by operating at a relatively high V D [ 5 , 6 ]. This transistor showed excellent performance up to 4 THz, which is crucial for sixth-generation (6G) wireless communication.…”

Current Status of Field-Effect Transistors for Biosensing Applications

“…Sometimes, enzymatic receptors need further functionalization, combinations of nano-particles and organic compounds [ 6 , 7 , 8 ], and other times, they need nano-porous materials anchored in the gate space of an FET transistor [ 9 ]. On the other hand, the FET class has been expanded in a huge palette of nano-devices in the last few years [ 10 , 11 , 12 ]. In biosensing, different transistors have been successfully used, Organic FETs, Carbon Nanotube FETs, Graphene FETs and Silicon-On-Insulator FETs, being the common transistors.…”