Annealing effect on forming-free bipolar resistive switching characteristics of sol-gel WOx resistive memories with Al conductive bridges

Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes

“…This implies that excessive O i and V Al are existing in the AlO x film (figure 7(a-1)), and carriers can transport via these abundant and connected defect states [27,28], resulting in a high conductive and nonswitching behavior of the device (figure 7(a-2)). When the O 2 ratio in oxidation ambient reduces to 50%, the O/Al ratio [19,20,29], which explains the polarity-independent set feature of the AlO x RRAM (figure 2(a)). Table 1 presents a comparison of bipolar RRAMs, which fabricated using one single AlO x RS layer, proposed in this work and recent literature.…”

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

“…Literature and our previous works have demonstrated that the bonding state of oxygen is highly influential for electrical properties of oxide semiconductors. 44–47 Fig. 6(a–c) show the O1s XPS spectra of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers.…”

“…Oxygen vacancy and Sn oxidation state variation and depth profile analysis of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers Literature and our previous works have demonstrated that the bonding state of oxygen is highly influential for electrical properties of oxide semiconductors. [44][45][46][47] Fig. 6(a-c) show the O1s XPS spectra of S/S/S, Z/Z/Z and Z/S/Z stacked semiconductor layers.…”

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

“…Conversely, by removing the applied bias or applying an opposite bias, the device can be turned off, thus switching to a high-resistance state (HRS). The resistive switching phenomenon is commonly observed in metal oxides such as NiO x , HfO x , AlO x , WO x , and SiO 2 , which are mostly deposited using methods such as atomic layer deposition, reactive sputtering, and the sol–gel process. − Among these, WO x is extensively used in field-effect transistors, photocatalytic sensors, and electrochromic and photochromic devices owing to its high thermal stability, superior optical and electrical properties, and compatibility with the CMOS technology. − Most WO x -based RRAM devices display typical nonvolatile characteristics. In a previous study by Cho et al., a WO x -based RRAM device was used as an artificial synapse based on repetitive potentiation and depression.…”