1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4)
DOI: 10.1109/mwsym.1994.335544
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Manufacture of low-loss microwave circuits using HMIC technology

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Cited by 13 publications
(6 citation statements)
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“…Semiconductor devices are mounted by flip-chip attach for the varactor and Schottky diodes, and with normal and compensated wire-bond interconnects [57] for the pHEMTs and MMICs. The glass substrate is made using M/A-COM's proprietary passive glass microwave integrated circuit (GMIC) process [58], [59]. Silicon and glass are combined to create a low-cost circuit medium that has attractive properties for millimeter-wave design.…”
Section: A Overview-system and Circuit Architecturementioning
confidence: 99%
“…Semiconductor devices are mounted by flip-chip attach for the varactor and Schottky diodes, and with normal and compensated wire-bond interconnects [57] for the pHEMTs and MMICs. The glass substrate is made using M/A-COM's proprietary passive glass microwave integrated circuit (GMIC) process [58], [59]. Silicon and glass are combined to create a low-cost circuit medium that has attractive properties for millimeter-wave design.…”
Section: A Overview-system and Circuit Architecturementioning
confidence: 99%
“…The second example considers a surge protector for commercial frequencies illustrating predictive design to provide the required bandpass response. For reference, the glass microwave integrated circuit (GMIC) cross section is shown in Appendix I [8], [9].…”
Section: Characterization Of Circuit Elementsmentioning
confidence: 99%
“…This circuit was implemented in HMIC [8] and the diodes marked D1-D4 are integrated in HMIC while the limited diodes marked L1 and L2 are bonded on the HMIC. The limiter diodes were bonded and not implemented in the HMIC as the optimum I-region thicknesses required by the two limiter diodes are different from each other and from that of the integrated switch diodes D1-D4.…”
Section: Example 1: Hmic Switch Limitermentioning
confidence: 99%